ST10F280_12 datasheet(45/239 Pages) STMICROELECTRONICS

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ST10F280

Internal Flash memory

Doc ID 8673 Rev. 3

45/239

;command

;must be performed

Prog_Error:

MOV R7, #0F0h

;load register R7 with Read/Reset command

EXTS R11, #1

;use EXTended addressing for next MOV instruction

MOV [R12], R7

;address is don’t care for Read/Reset command

...

;here place specific Error handling code

...

;When programming operation finished succesfully,

;Flash is set back automatically to normal Read Mode

Prog_OK:

....

Example 3: Performing the Block Erase command

We assume that in the initialization phase the lowest 32K Bytes of Flash memory (sector 0)

have been mapped to segment 1.The registers R11/R12 contain an address related to the

block to be erased (segment number in R11, segment offset in R12, for example R11 = 01h,

R12= 4000h will erase the block 1 first 8K byte block).

MOV R5, #01554h

;load auxilary register R5 with command address

;(used in command cycle 1)

MOV R6, #02AA8h

;load auxilary register R6 with command address

;(used in command cycle 2)

SXCT DPPO, #08h

;push data page pointer 0 and load it to point

;to

;segment 2

MOV R7, #0A8h

;load register R7 with 1st CI enable command

MOV [R5], R7

;command cycle 1

MOV R7, #054h

;load register R7 with 2cd CI enable command

MOV [R6], R7

;command cycle 2

MOV R7, #080h

;load register R7 with Block Erase command

MOV [R5], R7

;command cycle 3

MOV R7, #0A8h

;load register R7 with 1st CI enable command

MOV [R5], R7

;command cycle 4

MOV R7, #054h

;load register R7 with 2cd CI enable command

MOV [R6], R7

;command cycle 5

POP DPP0

;restore DPP0: following addressing to the Flash

;will use EXTended instructions

;R11 contains the segment of the block to be erased

;R12 contains the segment offset address of the

;block to be erased

MOV R7, #030h

;load register R7 with erase confirm code

EXTS R11, #1

;use EXTended addressing for next MOV instruction

MOV [R12], R7

;command cycle 6: the EPC starts execution of

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