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ST10F280 Fiches technique(PDF) 40 Page - STMicroelectronics |
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ST10F280 Fiches technique(HTML) 40 Page - STMicroelectronics |
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40 / 239 page ![]() Internal Flash memory ST10F280 40/239 Doc ID 8673 Rev. 3 ● Generally, command sequences cannot be written to Flash by instructions fetched from the Flash itself. Thus, the Flash commands must be written by instructions, executed from internal RAM or external memory. ● Command cycles on the CPU interface need not to be consecutively received (pauses allowed). The CPU interface delivers dummy read data for not used cycles within command sequences. ● All addresses of command cycles shall be defined only with Register-indirect addressing mode in the according move instructions. Direct addressing is not allowed for command sequences. Address segment or data page pointer are taken into account for the command address value. Erase Resume ER 1 Addr.(1) X(2) Read Data Polling or Toggle bit until Erase completes or Erase is suspended another time. Data xx30h Set Block/Code Protection SP 4 Addr.(1) x2A54h x15A8h x2A54h Any odd word address(7) Data xxA8h xx54h xxC0h WPR(8) Read Protection Status RP 4 Addr.(1) x2A54h x15A8h x2A54h Any odd word address(7) Read Protection Register until a new write cycle is initiated. Data xxA8h xx54h xx90h Read PR Block Temporary Unprotection BTU 4 Addr.(1) x2A54h x15A8h x2A54h X(2) Data xxA8h xx54h xxC1h xxF0h Code Temporary Unprotection CTU 1 Addr.(1) MEM(9) Write cycles must be executed from Flash. Data FFFFh Code Temporary Protection CTP 1 Addr.(1) MEM(9) Write cycles must be executed from Flash. Data FFFBh 1. Address bit A14, A15 and above are don’t care for coded address inputs. 2. X = do not care. 3. WA = Write Address: address of memory location to be programmed. 4. WD = Write Data: 16-bit data to be programmed. 5. Optional, additional blocks addresses must be entered within a time-out delay (96 µs) after last write entry, timeout status can be verified through FSB.3 value. When full command is entered, read Data Polling or Toggle bit until Erase is completed or suspended 6. Read Data Polling or Toggle bit until Erase completes. 7. Odd word address = 4n-2 where n = 0, 1, 2, 3..., ex. 0002h, 0006h... 8. WPR = Write protection register. To protect code, bit 15 of WPR must be ‘0’. To protect block N (N=0,1,...), bit N of WPR must be ‘0’. Bit that are already at ‘0’ in protection register must also be ‘0’ in WPR, else a writing error will occurs (it is not possible to write a ‘1’ in a bit already programmed at ‘0’). 9. MEM = any address inside the Flash memory space. Absolute addressing mode must be used (MOV MEM, Rn), and instruction must be executed from Flash memory space. Table 3. Instructions (continued) Instruction Mne Cycle 1st Cycle 2nd Cycle 3rd Cycle 4th Cycle 5th Cycle 6th Cycle 7th Cycle |
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