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ST10F280 Fiches technique(PDF) 40 Page - STMicroelectronics

No de pièce ST10F280
Description  16-bit MCU with MAC unit, 512 Kbyte Flash memory and 18 Kbyte RAM
PDF  239 Pages
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

ST10F280 Fiches technique(HTML) 40 Page - STMicroelectronics

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Internal Flash memory
ST10F280
40/239
Doc ID 8673 Rev. 3
Generally, command sequences cannot be written to Flash by instructions fetched from
the Flash itself. Thus, the Flash commands must be written by instructions, executed
from internal RAM or external memory.
Command cycles on the CPU interface need not to be consecutively received (pauses
allowed). The CPU interface delivers dummy read data for not used cycles within
command sequences.
All addresses of command cycles shall be defined only with Register-indirect
addressing mode in the according move instructions. Direct addressing is not allowed
for command sequences. Address segment or data page pointer are taken into account
for the command address value.
Erase Resume
ER
1
Addr.(1)
X(2)
Read Data Polling or Toggle bit until Erase completes or
Erase is suspended another time.
Data
xx30h
Set Block/Code
Protection
SP
4
Addr.(1)
x2A54h
x15A8h
x2A54h
Any odd
word
address(7)
Data
xxA8h
xx54h
xxC0h
WPR(8)
Read Protection
Status
RP
4
Addr.(1)
x2A54h
x15A8h
x2A54h
Any odd
word
address(7)
Read Protection Register
until a new write cycle is
initiated.
Data
xxA8h
xx54h
xx90h
Read
PR
Block
Temporary
Unprotection
BTU
4
Addr.(1)
x2A54h
x15A8h
x2A54h
X(2)
Data
xxA8h
xx54h
xxC1h
xxF0h
Code
Temporary
Unprotection
CTU
1
Addr.(1)
MEM(9)
Write cycles must be executed from Flash.
Data
FFFFh
Code
Temporary
Protection
CTP
1
Addr.(1)
MEM(9)
Write cycles must be executed from Flash.
Data
FFFBh
1.
Address bit A14, A15 and above are don’t care for coded address inputs.
2.
X = do not care.
3.
WA = Write Address: address of memory location to be programmed.
4.
WD = Write Data: 16-bit data to be programmed.
5.
Optional, additional blocks addresses must be entered within a time-out delay (96 µs) after last write entry, timeout status
can be verified through FSB.3 value. When full command is entered, read Data Polling or Toggle bit until Erase is
completed or suspended
6.
Read Data Polling or Toggle bit until Erase completes.
7.
Odd word address = 4n-2 where n = 0, 1, 2, 3..., ex. 0002h, 0006h...
8.
WPR = Write protection register. To protect code, bit 15 of WPR must be ‘0’. To protect block N (N=0,1,...), bit N of WPR
must be ‘0’. Bit that are already at ‘0’ in protection register must also be ‘0’ in WPR, else a writing error will occurs (it is not
possible to write a ‘1’ in a bit already programmed at ‘0’).
9.
MEM = any address inside the Flash memory space. Absolute addressing mode must be used (MOV MEM, Rn), and
instruction must be executed from Flash memory space.
Table 3.
Instructions (continued)
Instruction
Mne Cycle
1st
Cycle
2nd
Cycle
3rd
Cycle
4th
Cycle
5th
Cycle
6th
Cycle
7th
Cycle



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