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MM32F103CET Fiches technique(PDF) 59 Page - MindMotion Microelectronics

No de pièce MM32F103CET
Description  32-bit Micro controller based on ARM Cortex M3
PDF  89 Pages
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Fabricant  MINDMOTION [MindMotion Microelectronics]
Site Internet  https://www.mindmotion.com.cn/
Logo MINDMOTION - MindMotion Microelectronics

MM32F103CET Fiches technique(HTML) 59 Page - MindMotion Microelectronics

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DS_MM32F103xx_o_Ver1.13
Electrical characteristics
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This
test conforms to the JESD22-A114/C101 standard.
Static latch-up
Two complementary static tests are required on six parts to assess the latch-up perfor-
mance：
• A supply overvoltage is applied to each power supply pin
• A current injection is applied to each input, output and configurable I/O pin
These tests are compliant with EIA/JESD78A IC latch-up standard.
Table 29. ESD characteristics
Symbol
Parameter
Conditions
Type
Max
Unit
VESD(HBM)
Electrostatic discharge voltage
(Human body model)
TA = +25◦C,
Conforming to
JESD22-A114
2000
V
VESD(CDM)
Electrostatic discharge voltage
(Charging device model)
TA = +25◦C,
Conforming to
JESD22-C101
500
ILU
Latch-up current
TA =
+25◦C,Conforming to
JESD78A
200
mA
5.3.12 I/O port characteristics
General input/output characteristics
Unless otherwise specified, the parameters given in Table 7 are derived from tests.
Table 30. I/O static characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VIL
Low level input voltage
CMOS Port
-0.5
1.1
V
VIH
High level input voltage
CMOS Port
2.08
V
Vhys
Schmitt trigger hysteresis(1)
500
700
800
mV
Ilkg
Input leakage current(2)
1
µA
RPU
Weak pull-up equivalent
resistor(3)
VIN = VSS
30
50
100
kΩ
RPD
Weak pull-down equivalent
resistor(3)
VIN = VDD
30
50
100
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