MM32F103CET datasheet(57/89 Pages) MINDMOTION

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DS_MM32F103xx_o_Ver1.13

Electrical characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

tERASE

Page (512K bytes) erase time

TA = -40◦C

∼

125◦C

tME

Mass erase time

TA = -40◦C

∼

125◦C

IDD

Supply current

Read mode, fHCLK =

48MHz

Write mode,fHCLK =

48MHz

Erase mode, fHCLK

= 48MHz

ISB

Standby current

1@25◦C

50@125◦C

μA

IDEP

Deep Standby current

0.5

15@125◦C

μA

Table 27. Flash memory endurance and data retention(1)(2)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

NEND

Endurance

(Annotation:

Erase

number of

times)

TA = - 40◦C

∼ 85◦C

TA = - 40◦C

∼ 105◦C

K cycle

tRET

Data

retention

1 K cycle(2) at TA = 85◦C

Year

1 K cycle(1)(2) at TA = 105◦C

10 K cycle(1)(2) at TA = 55◦C

1. Guaranteed by design, not tested in production.

2. Cycle tests are carried out in the whole temperature range.

5.3.10 EMC characteristics

Susceptibility tests are performed on a sample basis during device characterization.

Functional EMS (electromagnetic susceptibility)

While a simple application is executed on the device (toggling 2 LEDs through I/O ports) ,

the device is stressed by two electromagnetic events until a failure occurs. The failure is

indicated by the LEDs:

• Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until a

functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.

• FTB：A Burst of Fast Transient voltage (positive and negative) is applied to VDD and

VSS through a 100 pF capacitor, until a functional disturbance occurs. This test is

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