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MM32F103CET Fiches technique(PDF) 55 Page - MindMotion Microelectronics |
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MM32F103CET Fiches technique(HTML) 55 Page - MindMotion Microelectronics |
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55 / 89 page ![]() DS_MM32F103xx_o_Ver1.13 Electrical characteristics Table 22. HSI oscillator characteristics(1)(2) Symbol Parameter Conditions Min Typ Max Unit fHSI Frequency 40 48 64 MHz ACCHSI Accuracy of the HSI oscillator TA = -40◦C ∼ 105◦C -5 5 % ACCHSI Accuracy of the HSI oscillator TA = -10◦C ∼ 85◦C -3 3 % ACCHSI Accuracy of the HSI oscillator TA = 0◦C ∼ 70◦C -2 2 % ACCHSI Accuracy of the HSI oscillator TA = 25 -1 1 % tSU(HSI) HSI oscillator startup time 2 μS IDD(HSI) HSI oscillator power consumption 81 200 μA 1. VDD = 3.3V, TA = - 40◦C ∼ 105◦C, unless otherwise specified. 2. Guaranteed by design, not tested in production. Low-speed internal (LSI) oscillator Table 23. LSI oscillator characteristics(1) Symbol Parameter Conditions Min Typ Max Unit fLSI ( 2) Frequency 31 40 75 KHz tSU(LSI) ( 2) LSI oscillator startup time 1 μS IDD(LSI) ( 3) LSI oscillator power consumption 1.1 1.7 μA 1. VDD = 3.3V, TA = -40◦C ∼ 105◦C, Unless otherwise stated 2. Comprehensive assessment, not tested in production. 3. Guaranteed by design, not tested in production. Wake-up times from low power mode The wake-up times listed in the table below are measured during the wake-up phase of the internal clock HSI. The clock source used when waking up depends on the current operating mode: • Stop or Standby mode: The clock source is the oscillator • Sleep mode: The clock source is the clock used when entering sleep mode All times are measured using ambient temperature and supply voltage in accordance with common operating conditions. www.mm32mcu.com 49/83 |
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