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MM32F103CET Fiches technique(PDF) 45 Page - MindMotion Microelectronics |
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MM32F103CET Fiches technique(HTML) 45 Page - MindMotion Microelectronics |
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45 / 89 page ![]() DS_MM32F103xx_o_Ver1.13 Electrical characteristics Symbol Parameter Conditions Min Max Unit VDDA Analog operating voltage Must be the same voltage as VDD ( 1) 2.5 5.5 V VBAT Backup part of working voltage 1.8 5.5 V PD Power dissipation temperature: TA = 85◦C ( 2) LQFP64 203 mW LQFP48 LQFP32/QFN32 TA Ambient temperature: TA=85◦C Maximum power dissipation -40 85 ◦C Low power dissipation(3) -40 105 Ambient temperature: TA=105◦C Maximum power dissipation -40 105 ◦C Low power dissipation(3) -40 125 1. It is recommended to use the same power supply for VDD and VDDA, the maximum permissible difference between VDD and VDDA is 300mVduring power up and normal operation. 2. If TA is low, higher PD values are allowed as long as TJ does not exceed TJmax (See subsec 5.1). 3. In low power dissipation state, TA can be extended to this range as long as TJ does not exceed TJmax (See subsec 5.1). 5.3.2 Operating conditions at power-up/power-down The parameters given in the table below are based on tests under normal operating con- ditions. Table 11. Operating conditions at power-up/power-down Symbol Parameter Conditions Min Max Unit tVDD VVDDrise time rate TA = 27◦C 100 ∞ µS/V VVDDfall time rate 100 ∞ 5.3.3 Embedded reset and power control block characteristics The parameters given in the table below are based on the ambient temperature and the VDD supply voltage listed in Table 10. Table 12. Embedded reset and power control block characteristics Symbol Parameter Conditions Min Typ Max Unit VPVD Level selection of programmable voltage detectors PLS[3:0]=0000 (Rising edge) 1.813 1.819 1.831 V PLS[3:0]=0000 (Falling edge) 1.705 V PLS[3:0]=0001 (Rising edge) 2.112 2.116 2.124 V PLS[3:0]=0001 (Falling edge) 2.0 V www.mm32mcu.com 39/83 |
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