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L9300 Fiches technique(PDF) 7 Page - STMicroelectronics |
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L9300 Fiches technique(HTML) 7 Page - STMicroelectronics |
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7 / 178 page ![]() Symbol Parameter Test conditions Min. Typ. Max. Unit Pin Direction VDDIO Local -0.3 19 V S WAKE Global (3) -0.3 40 V I CONFIG Local (3) -0.3 40 V I CS, SCLK, SDI, EN_DR, VDD1_SEL, CAN_DIS, PRN, WD_DIS Local -0.3 19 V I SDO, DOUTx Local -0.3 19 V O RES1, RES2 Local -0.3 5.5 V O INx Local -0.3 19 V I CAN_VDD Local -0.3 19 V S CANTXD Local -0.3 19 V I CANRXD Local -0.3 19 V O CANH, CANL Global CANH-CANL≤40 V -18 40 V I/O GND_A Local Digital ground reference -0.3 0.3 V S GND Local Ground reference 0 V S 1. In case ECU pin is shorted to GND and gnd shift is present, the absolute values can be exceeded without damage and without impact on other functions provided that the max reverse current on the involved pin is within the max value specified in the electrical characteristic sections; 2. During Schottky diode activation time the absolute value can be exceeded without impact on buck functionality. 3. Protected with external 1 kΩ series resistor during battery transients 4.1 Latch-up trials Latch-up tests performed according to JEDEC 78 class 2 Level A 4.2 ESD Table 2. ESD requirements Symbol Parameter Test condition Min Typ Max Unit Pin ESD HBM Global HBM global pins ESD according to the Human Body Model (HBM), Q100-002 for global pins; (100 pF/1.5 kΩ) -4 4 kV Global ESD HBM HBM local pins ESD according to the Human Body Model (HBM), Q100-002 for all pins; (100 pF/1.5 kΩ) -2 2 kV ALL ESD CDM Corner(1) CDM corner pins ESD according to the Charged Device Model (CDM), Q100-011 Corner pins -750 750 V Corner ESD CDM CDM all pins ESD according to the Charged Device Model (CDM), Q100-011 All pins -500 500 V ALL 1. VDD4_SH, WAKE: -650V, slug-up version only. L9300 Absolute maximum ratings DS12258 - Rev 5 page 7/178 |
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