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ST72C171 Fiches technique(PDF) 129 Page - STMicroelectronics |
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ST72C171 Fiches technique(HTML) 129 Page - STMicroelectronics |
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129 / 152 page ![]() ST72C171 129/152 9.8 I/O PORT PIN CHARACTERISTICS 9.8.1 General Characteristics Subject to general operating conditions for VDD, fOSC, and TA unless otherwise specified. Figure 81. Two typical Applications with unused I/O Pin Figure 82. Typical IPU vs. VDD with VIN=VSS Notes: 1. Unless otherwise specified, typical data are based on TA=25°C and VDD=5V. 2. Data based on characterization results, not tested in production. 3. Hysteresis voltage between Schmitt trigger switching levels. Based on characterization results, not tested. 4. Configuration not recommended, all unused pins must be kept at a fixed voltage: using the output mode of the I/O for example or an external pull-up or pull-down resistor (see Figure 81). Data based on design simulation and/or technology characteristics, not tested in production. 5. The RPU pull-up equivalent resistor is based on a resistive transistor (corresponding IPU current characteristics de- scribed in Figure 82). This data is based on characterization results, tested in production at VDD max. 6. Data based on characterization results, not tested in production. 7. To generate an external interrupt, a minimum pulse width has to be applied on an I/O port pin configured as an external interrupt source. Symbol Parameter Conditions Min Typ 1) Max Unit VIL Input low level voltage 2) 0.3xVDD V VIH Input high level voltage 2) 0.7xVDD Vhys Schmitt trigger voltage hysteresis 3) 400 mV IL Input leakage current VSS≤VIN≤VDD ±1 µA IS Static current consumption 4) Floating input mode 200 RPU Weak pull-up equivalent resistor 5) VIN=VSS VDD=5V 70 120 250 k Ω VDD=3.3V 170 200 230 CIO I/O pin capacitance 5 pF tf(IO)out Output high to low level fall time 6) CL=50pF Between 10% and 90% 25 ns tr(IO)out Output low to high level rise time 6) 25 tw(IT)in External interrupt pulse time 7) 1tCPU 10k Ω UNUSED I/O PORT ST72XXX 10k Ω UNUSED I/O PORT ST72XXX VDD 3.2 3.5 4 4.5 5 5.5 Vdd [V] 0 10 20 30 40 50 60 70 Ipu [µA] Ta=-40°C Ta=25°C Ta=85°C |
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