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L99MH98 Fiches technique(PDF) 18 Page - STMicroelectronics |
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L99MH98 Fiches technique(HTML) 18 Page - STMicroelectronics |
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18 / 147 page ![]() Symbol Parameter Test condition Min Typ Max Unit Vihyst Input voltage hysteresis 0.1 - 0.5 V ICSN in CSN pull-up current input Probe current on force input pin at VHL voltage in DC conditions 20 40 60 uA ISDI in SCLK, SDI pull down current input Probe current on force input pin at VIL voltage in DC conditions 20 40 60 μA VSDO low SDO output low voltage ISDO out = 1 mA - - 0.4 V VSDO high SDO output high voltage ISDO out = 1 mA 3.0 V ≤ VDD ≤ 5.5 V VDD - 0.4 - - V ISDO leak SDO tristate leakage current VCSN ≥ 2 V 0 V ≤ VSDO IN ≤ VDD -10 - 10 μA AC parameters fCLK Clock frequency CSDO = 50 pF - - 6 MHz tCLK Clock period CSDO = 50 pF 166 - - ns t1(1) Clock high time 75 - - ns t2(1) Clock low time 75 - - ns t3(1) CLK low before CSN active 20 - - ns t4(1) CLK active after CSN active 100 - - ns t5(1) CLK passive before CSN passive 100 - - ns t6(1) SDI setup time 30 - - ns t7(1) SDI hold time 30 - - ns t8(1) SDO active after CSN active CSDO = 50 pF - - 100 ns t9(1) SDO tristate after CSN passive CSDO = 50 pF - - 100 ns t10(1) SDO valid time CSDO = 50 pF - - 70 ns t11(1) SDO hold time CSDO = 50 pF 10 - - ns t12(1) SDO rise time CSDO = 50 pF - - 50 ns t13(1) SDO fall time CSDO = 50 pF - - 50 ns t14(1) CSN passive time to next frame 600 - - ns t15(1) CLK passive time to next 100 - - ns t16(1) SDI data of next frame 20 - - ns tCSN_fail CSN low timeout Tested by scan 20 35 50 ms tSTART Time at the start up before a correct SPI frame can be received Tested by scan - - 300 μs 1. See the Figure 32. L99MH98 Electrical specifications DS14611 - Rev 3 page 18/147 |
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