MB9BF412R datasheet(109/121 Pages) SPANSION

109 / 121 page

D a t a S h e e t

106

MB9B410R-DS706-00026-3v0-E, March 11, 2015

CONFIDENTIAL

MainFlash Memory Write/Erase Characteristics

(1) Write / Erase time

(VCC = 2.7V to 5.5V, TA = - 40°C to + 85°C)

Parameter

Value

Unit

Remarks

Typ*

Max*

Sector erase

time

Large Sector

0.7

3.7

Includes write time prior to internal

erase

Small Sector

0.3

1.1

Half word (16-bit)

write time

384

μs

Not including system-level overhead

time

Chip erase time

38.4

Includes write time prior to internal

erase

*: The typical value is immediately after shipment, the maximam value is guarantee value under 100,000

cycle of erase/write.

(2) Erase/write cycles and data hold time

Erase/write cycles (cycle)

Data hold time (year)

Remarks

1,000

20*

10,000

10*

100,000

*: At average + 85C

WorkFlash Memory Write/Erase Characteristics

(1) Write / Erase time

(VCC = 2.7V to 5.5V, TA = - 40°C to + 85°C)

Parameter

Value

Unit

Remarks

Typ*

Max*

Sector erase time

0.3

1.5

Includes write time prior to internal

erase

Half word (16-bit)

write time

384

μs

Not including system-level overhead

time

Chip erase time

1.2

Includes write time prior to internal

erase

*: The typical value is immediately after shipment, the maximam value is guarantee value under 10,000 cycle

of erase/write.

(2) Erase/write cycles and data hold time

Erase/write cycles (cycle)

Data hold time (year)

Remarks

1,000

20*

10,000

10*

*: At average + 85C

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