STF36N60M6 datasheet(4/13 Pages) STMICROELECTRONICS

No de pièce	STF36N60M6

Description	N-channel 600 V, 85 m typ., 30 A MDmesh™ M6 Power MOSFET in a TO-220FP package

PDF	13 Pages

Scroll/Zoom	100%

Fabricant	STMICROELECTRONICS [STMicroelectronics]

Site Internet	http://www.st.com

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4 / 13 page

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISDM(1)

Source-drain current (pulsed)

102

VSD (2)

Forward on voltage

VGS = 0 V, ISD = 30 A

1.6

trr

Reverse recovery time

ISD = 30 A, di/dt = 100 A/µs, VDD = 60 V

(see Figure 15. Test circuit for inductive

load switching and diode recovery times)

340

Qrr

Reverse recovery charge

5.3

µC

IRRM

Reverse recovery current

trr

Reverse recovery time

ISD = 30 A, di/dt = 100 A/µs, VDD = 60 V,

Tj = 150 °C (see Figure 15. Test circuit

for inductive load switching and diode

recovery times)

430

Qrr

Reverse recovery charge

7.7

µC

IRRM

Reverse recovery current

1. Pulse width is limited by safe operating area.

2. Pulse test: pulse duration = 300 μs, duty cycle 1.5%.

STF36N60M6

Electrical characteristics

DS12609 - Rev 1

page 4/13

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