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STF36N60M6 Fiches technique(PDF) 3 Page - STMicroelectronics

No de pièce STF36N60M6
Description  N-channel 600 V, 85 m typ., 30 A MDmesh™ M6 Power MOSFET in a TO-220FP package
PDF  13 Pages
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STF36N60M6 Fiches technique(HTML) 3 Page - STMicroelectronics

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Electrical characteristics
TC = 25 °C unless otherwise specified
Table 4. On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
VGS = 0 V, ID = 1 mA
600
V
IDSS
Zero gate voltage drain current
VGS = 0 V, VDS = 600 V
1
µA
VGS = 0 V, VDS = 600 V, TC = 125 °C(1)
100
µA
IGSS
Gate-body leakage current
VDS = 0 V, VGS = ±25 V
±5
µA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
3.25
4
4.75
V
RDS(on)
Static drain-source on-
resistance
VGS = 10 V, ID = 15 A
85
99
mΩ
1. Defined by design, not subject to production test.
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Input capacitance
VDS= 100 V, f = 1 MHz, VGS = 0 V
-
1960
-
pF
Coss
Output capacitance
-
93
-
pF
Crss
Reverse transfer capacitance
-
6
-
pF
Coss eq. (1)
Equivalent output capacitance
VDS = 0 to 480 V, VGS = 0 V
-
332
-
pF
RG
Intrinsic gate resistance
f = 1 MHz, ID = 0 A
-
1.6
-
Qg
Total gate charge
VDD = 480 V, ID = 30 A, VGS = 0 to 10 V
(see Figure 14. Test circuit for gate
charge behavior)
-
44.3
-
nC
Qgs
Gate-source charge
-
10.1
-
nC
Qgd
Gate-drain charge
-
25
-
nC
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0
to 80% VDSS
Table 6. Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VDD = 300 V, ID = 15 A, RG = 4.7 Ω,
VGS = 10 V (see Figure 13. Test circuit
for resistive load switching times and
Figure 18. Switching time waveform)
-
15.2
-
ns
tr
Rise time
-
5.3
-
ns
td(off)
Turn-off delay time
-
50.2
-
ns
tf
Fall time
-
7.3
-
ns
Table 7. Source-drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain current
-
30
A
STF36N60M6
Electrical characteristics
DS12609 - Rev 1
page 3/13



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