STF36N60M6 datasheet(2/13 Pages) STMICROELECTRONICS

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Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

±25

ID (1)

Drain current (continuous) at TC = 25 °C

ID (1)

Drain current (continuous) at TC = 100 °C

IDM(2)

Drain current (pulsed)

102

PTOT

Total dissipation at TC = 25 °C

dv/dt (3)

Peak diode recovery voltage slope

V/ns

dv/dt (4)

MOSFET dv/dt ruggedness

V/ns

VISO

Insulation withstand voltage (RMS) from all three leads to external heat

sink (t = 1 s; TC = 25 °C)

2.5

Tstg

Storage temperature range

-55 to 150

°C

Operating junction temperature range

1. Limited by maximum junction temperature.

2. Pulse width limited by safe operating area.

3. ISD ≤ 30 A, di/dt ≤ 400 A/μs; VDS(peak) < V(BR)DSS, VDD = 400

4. VDS ≤ 480 V

Table 2. Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

3.1

°C/W

Rthj-amb

Thermal resistance junction-ambient

62.5

°C/W

Table 3. Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not repetitive

(pulse width limited by Tjmax)

EAS

Single pulse avalanche energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

750

STF36N60M6

Electrical ratings

DS12609 - Rev 1

page 2/13

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