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STF36N60M6 Fiches technique(PDF) 6 Page - STMicroelectronics |
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STF36N60M6 Fiches technique(HTML) 6 Page - STMicroelectronics |
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6 / 13 page ![]() Figure 7. Capacitance variations GADG220320170921CVR 104 103 102 101 100 10-1 100 101 102 C (pF) VDS (V) CISS COSS CRSS f= 1MHz Figure 8. Normalized gate threshold voltage vs temperature GIPG300920151316VTH 1.1 1.0 0.9 0.8 0.7 0.6 -75 -25 25 75 125 VGS(th) (norm.) TJ (°C) ID = 250 µA Figure 9. Normalized on-resistance vs temperature GIPG300920151317RON 2.2 1.8 1.4 1.0 0.6 0.2 -75 -25 25 75 125 RDS(on) (norm.) TJ (°C) VGS = 10 V Figure 10. Normalized V(BR)DSS vs temperature GIPG300920151318BDV 1.08 1.04 1.00 0.96 0.92 0.88 -75 -25 25 75 125 V(BR)DSS (norm.) TJ (°C) ID = 1 mA Figure 11. Output capacitance stored energy GADG010220171214EOS 16 12 8 4 0 0 100 200 300 400 500 600 EOSS (µJ) VDS (V) Figure 12. Source-drain diode forward characteristics GADG010220171212SDF 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0 5 10 15 20 25 30 VSD (V) ISD (A) TJ = -50 °C TJ = 25 °C TJ = 150 °C STF36N60M6 Electrical characteristics (curves) DS12609 - Rev 1 page 6/13 |
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