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STF36N60M6 Fiches technique(PDF) 5 Page - STMicroelectronics

No de pièce STF36N60M6
Description  N-channel 600 V, 85 m typ., 30 A MDmesh™ M6 Power MOSFET in a TO-220FP package
PDF  13 Pages
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STF36N60M6 Fiches technique(HTML) 5 Page - STMicroelectronics

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2.1
Electrical characteristics (curves)
Figure 1. Safe operating area
GIPG050620181503SOA
10 2
10 1
10 0
10 -1
10 -1
10 0
10 1
10 2
ID
(A)
VDS (V)
tp =10 µs
tp =100 µs
tp =1 ms
tp =10 ms
Operation in this area is
limited by R DS(on)
single pulse
TJ≤150 °C
TC=25 °C
VGS=10 V
Figure 2. Thermal impedance
10-1
10-2
10-3
K
t
p(s)
10-4
10-3
10-2
10-1
10-0
Zth= K*RthJ-c
δ =t p/Ƭ
tp
Ƭ
δ=0.5
0.01
Single pulse
0.2
0.1
0.02
0.05
GC20521
Figure 3. Output characteristics
GADG220320170910OCH
100
80
60
40
20
0
0
2
4
6
8
10 12 14 16
ID
(A)
VDS (V)
VGS = 9, 10V
VGS = 8V
VGS = 7V
VGS = 5V
VGS = 6V
Figure 4. Transfer characteristics
GADG220320170910TCH
100
80
60
40
20
0
3
4
5
6
7
8
9
ID
(A)
VGS (V)
VDS = 18V
Figure 5. Gate charge vs gate-source voltage
GADG030220171159QVG
12
10
8
6
4
2
0
600
500
400
300
200
100
0
0
10
20
30
40
50
VGS
(V)
VDS
(V)
Q g (nC)
VDS
VDD = 480 V
ID = 30 A
Figure 6. Static drain-source on-resistance
GADG010220171211RID
91
89
87
85
83
81
79
0
5
10
15
20
25
30
RDS(on)
mΩ
ID (A)
VGS =10 V
STF36N60M6
Electrical characteristics (curves)
DS12609 - Rev 1
page 5/13



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