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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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NM1282KSLAXAL Fiches technique(PDF) 15 Page - Nanya Technology Corporation. |
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NM1282KSLAXAL Fiches technique(HTML) 15 Page - Nanya Technology Corporation. |
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15 / 120 page  Version 1.3 15 Nanya Technology Corp. 06/2018 All Rights Reserved. © 2Gb SLC NAND + 2Gb LPDDR2 NM1282KSLAXAL NTC Proprietary Level: Property AC Characteristics and Recommended Operating Conditions (Ta= -25 to 85 ℃, V CC =1.70 to 1.95V) Symbol Parameter Min Max Unit tCLS CLE Setup Time 12 – ns tCLH CLE Hold Time 5 – ns tCS Setup Time 20 – ns tCH Hold Time 5 – ns tWP Write Pulse Width 12 – ns tALS ALE Setup Time 12 – ns tALH ALE Hold Time 5 – ns tDS Data Setup Time 12 – ns tDH Data Hold Time 5 – ns tWC Write Cycle Time 25 – ns tWH High Hold Time 10 – ns AC Characteristics for Operation Symbol Parameter Min Max Unit tWW High to Low 100 – ns tRR Ready to Falling Edge 20 – ns tRW Ready to Falling Edge 20 – ns tRP Read Pulse Width 12 – ns tRC Read Cycle Time 25 – ns tREA Access Time – 20 ns tCEA Access Time – 25 ns tCLR CLE Low to Low 10 – ns tAR ALE Low to Low 10 – ns tRHOH High to Output Hold Time 25 – ns tRLOH Low to Output Hold Time 5 – ns tRHZ High to Output High Impedance – 60 ns tCHZ High to Output High Impedance – 20 ns tCSD High to ALE or CLE Don’t care 0 – ns tREH High Hold Time 10 – ns tIR Output-High-impedance-to- Falling Edge 0 – ns tRHW High to Low 30 – ns tWHC High to Low 30 – ns tWHR High to Low 60 – ns tR Memory Cell Array to Starting Address – 25 μs tDCBSYR1 Data Cache Busy in Read Cache (following 31h and 3Fh) – 25 μs tDCBSYR2 Data Cache Busy in Page Copy (following 3Ah) – 30 μs tWB High to Busy – 100 ns tRST Device Reset Time (Ready/Read/Program/Erase) – 5/5/10/500 μs NOTE 1 tCLS and tALS cannot be shorter than tWP. NOTE 2 tCS should be longer than tWP + 8ns. |
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