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M36DR232B Fiches technique(PDF) 28 Page - STMicroelectronics

No de pièce M36DR232B
Description  32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product
PDF  46 Pages
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M36DR232B Fiches technique(HTML) 28 Page - STMicroelectronics

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Table 26. Flash Write AC Characteristics, Write Enable Controlled
(TA =–40 to 85 °C; VDDF = 1.65V to 2.2V
Figure 9. Flash Write AC Waveforms, WF Controlled
Note: 1. Address are latched on the falling edge of WF, Data is latched on the rising edge of WF.
Symbol
Alt
Parameter
Flash
Unit
100
120
Min
Max
Min
Max
tAVAV
tWC
Address Valid to Next Address Valid
100
120
ns
tAVWL
tAS
Address Valid to Write Enable Low
0
0
ns
tDVWH
tDS
Input Valid to Write Enable High
50
50
ns
tELWL
tCS
Chip Enable Low to Write Enable Low
0
0
ns
tGHWL
Output Enable High to Write Enable Low
0
0
ns
tPLQ7V
RPF Low to Reset Complete During Program/Erase
15
15
µs
tVDHEL
tVCS
VCCF High to Chip Enable Low
50
50
µs
tWHDX
tDH
Write Enable High to Input Transition
0
0
ns
tWHEH
tCH
Write Enable High to Chip Enable High
0
0
ns
tWHGL
tOEH
Write Enable High to Output Enable Low
30
30
ns
tWHWL
tWPH
Write Enable High to Write Enable Low
30
30
ns
tWLAX
tAH
Write Enable Low to Address Transition
50
50
ns
tWLWH
tWP
Write Enable Low to Write Enable High
50
50
ns
AI90210
EF
GF
WF
A0-A20
DQ0-DQ15
VALID
VALID
VDDF
tVDHEL
tWHEH
tWHWL
tELWL
tAVWL
tWHGL
tWLAX
tWHDX
tAVAV
tDVWH
tWLWH
tGHWL



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