M36DR232B datasheet(18/46 Pages) STMICROELECTRONICS

No de pièce	M36DR232B

Description	32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product

PDF	46 Pages

Scroll/Zoom	100%

Fabricant	STMICROELECTRONICS [STMicroelectronics]

Site Internet	http://www.st.com

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18 / 46 page

M36D232A, M36DR232B

18/46

POWER CONSUMPTION

Power Down

The memory provides Reset/Power Down control

input RPF. The Power Down function can be acti-

vated only if the relevant Configuration Register bit

is set to '1'. In this case, when the RPF signal is

pulled at VSS the supply current drops to typically

IDDD (see Table 24), the memory is deselected

and the outputs are in high impedance.If RPF is

pulled to VSS during a Program or Erase opera-

tion, this operation is aborted in tPLQ7V and the

memory content is no longer valid (see Reset/

Power Down input description).

Power Up

The memory Command Interface is reset on Pow-

er Up to Read Array. Either EF or WF must be tied

to VIH during Power Up to allow maximum security

and the possibility to write a command on the first

rising edge of WF.

Supply Rails

Normal precautions must be taken for supply volt-

age decoupling; each device in a system should

have the VCCF rails decoupled with a 0.1µF capac-

itor closetothe VCCF and VSS pins. The PCB trace

widths should be sufficient to carry the required

VCCF program and erase currents.

M36DR232B Fiches technique(PDF) 18 Page - STMicroelectronics