2SK3353_15 datasheet(3/10 Pages) RENESAS

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MOS FIELD EFFECT TRANSISTOR

2SK3353

SWITCHING

N-CHANNEL POWER MOS FET

DATA SHEET

Document No.

D14130EJ4V0DS00 (4th edition)

Date Published

July 2002 NS CP(K)

Printed in Japan

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

The mark ! shows major revised points.

DESCRIPTION

The 2SK3353 is N-channel MOS Field Effect Transistor

designed for high current switching applications.

FEATURES

• Super low on-state resistance:

RDS(on)1 = 9.5 m

Ω MAX. (VGS = 10 V, ID = 41 A)

RDS(on)2 = 14 m

Ω MAX. (VGS = 4 V, ID = 41 A)

• Low Ciss: Ciss = 4650 pF TYP.

• Built-in gate protection diode

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage (VGS = 0 V)

VDSS

Gate to Source Voltage (VDS = 0 V)

VGSS

±20

Drain Current (DC) (TC = 25°C)

ID(DC)

±82

Drain Current (pulse)

Note1

ID(pulse)

±328

Total Power Dissipation (TC = 25°C)

Total Power Dissipation (TA = 25°C)

1.5

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

–55 to +150

°C

Single Avalanche Current

Note2

IAS

Single Avalanche Energy

Note2

EAS

202

Notes 1. PW

≤ 10

µs, Duty cycle ≤ 1%

2. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20

→ 0 V

ORDERING INFORMATION

PART NUMBER

PACKAGE

2SK3353

TO-220AB

2SK3353-S

TO-262

2SK3353-ZJ

TO-263

2SK3353-Z

TO-220SMD

Note

Note TO-220SMD package is produced only in

Japan

(TO-220AB)

(TO-262)

(TO-263, TO-220SMD)

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