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2SK3353 Fiches technique(PDF) 7 Page - Renesas Technology Corp

No de pièce 2SK3353
Description  MOS FIELD EFFECT TRANSISTOR
PDF  10 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricant  RENESAS [Renesas Technology Corp]
Site Internet  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SK3353 Fiches technique(HTML) 7 Page - Renesas Technology Corp

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Data Sheet D14130EJ4V0DS
5
2SK3353
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - ˚C
0
−50
5
10
15
0
50
100
150
ID = 41 A
20
25
10 V
VGS = 4.0 V
Pulsed
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
0.8
1.2
1.6
0
2.0
VSD - Source to Drain Voltage - V
0.4
Pulsed
1
10
100
1000
VGS = 10 V
VGS = 0 V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
100
0.1
1000
10000
100000
1
10
100
VGS = 0 V
f = 1 MHz
Coss
Crss
Ciss
SWITCHING CHARACTERISTICS
ID - Drain Current - A
100
10
1
0.1
1000
10000
10
100
tf
tr
td(on)
td(off)
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
ID - Drain Current - A
di/dt = 100 A/ s
VGS = 0 V
1
0.1
10
1.0
10
100
1000
100
µ
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
QG - Gate Charge - nC
00
0
40
60
20
80
100 120
140 160
20
40
60
80
100
2
4
VDS
6
10
8
VGS
VDD = 48 V
30 V
12 V
ID = 82 A



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