2SK3353_15 datasheet(6/10 Pages) RENESAS

No de pièce	2SK3353

Description	MOS FIELD EFFECT TRANSISTOR

PDF	10 Pages

Scroll/Zoom	100%

Fabricant	RENESAS [Renesas Technology Corp]

Site Internet	http://www.renesas.com

Logo

6 / 10 page

Data Sheet D14130EJ4V0DS

2SK3353

FORWARD TRANSFER CHARACTERISTICS

VGS - Gate to Source Voltage - V

Pulsed

VDS = 10 V

0.1

100

1000

TA =

−50˚C

25˚C

75˚C

150˚C

DRAIN CURRENT vs.

DRAIN TO SOURCE VOLTAGE

VDS - Drain to Source Voltage - V

300

250

200

150

100

Pulsed

VGS =10 V

4.0 V

FORWARD TRANSFER ADMITTANCE vs.

DRAIN CURRENT

ID - Drain Current - A

0.1

100

0.1

Pulsed

TA = 150˚C

75˚C

25˚C

−50˚C

VDS = 10 V

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

GATE TO SOURCE VOLTAGE

VGS - Gate to Source Voltage - V

510

Pulsed

ID = 41 A

DRAIN TO SOURCE ON-STATE

RESISTANCE vs. DRAIN CURRENT

ID - Drain Current - A

0.1

100

1000

Pulsed

10 V

VGS = 4.0 V

GATE CUT-OFF VOLTAGE vs.

CHANNEL TEMPERATURE

Tch - Channel Temperature - ˚C

0.5

VDS = 10 V

ID = 1 mA

1.5

2.5

−50

100

150

2SK3353 Fiches technique(PDF) 6 Page - Renesas Technology Corp

2SK3353 Fiches technique(HTML) 6 Page - Renesas Technology Corp

Html Pages

1 2 3 4 5 6 7 8 9 10

Fiches technique Télécharger

Lien URL