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2SK3353 Fiches technique(PDF) 5 Page - Renesas Technology Corp

No de pièce 2SK3353
Description  MOS FIELD EFFECT TRANSISTOR
PDF  10 Pages
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Fabricant  RENESAS [Renesas Technology Corp]
Site Internet  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SK3353 Fiches technique(HTML) 5 Page - Renesas Technology Corp

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Data Sheet D14130EJ4V0DS
3
2SK3353
TYPICAL CHARACTERISTICS (TA = 25°C )
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
Tch - Channel Temperature - ˚C
040
20
60
100
140
80
120
160
100
80
60
40
20
0
TC - Case Temperature - ˚C
0
0
80
20
40
60
100
140
120
160
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
20
40
60
80
100
140
120
FORWARD BIAS SAFE OPERATING AREA
VDS - Drain to Source Voltage - V
1
0.1
10
100
1000
1
10
100
TC = 25˚C
Single Pulse
0.1
ID(pulse)
PW
=
10
µs
100
µs
1 ms
DC
R
DS
(o
n) Limited
(at
V
GS
=
10
V)
ID(DC)
Power
Dissipation
Limited
10
ms
PW - Pulse Width - s
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
10
0.01
0.1
1
100
1000
1 m
10 m
100 m
1
10
100
1000
Single Pulse
10
100
Rth(ch-C) = 1.32˚C/W
µ
µ
Rth(ch-A) = 83.3˚C/W



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