2SK3353_15 datasheet(4/10 Pages) RENESAS

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Data Sheet D14130EJ4V0DS

2SK3353

ELECTRICAL CHARACTERISTICS (TA = 25°C)

Characteristics

Symbol

Test Conditions

MIN.

TYP.

MAX.

Unit

Zero Gate Voltage Drain Current

IDSS

VDS = 60 V, VGS = 0 V10

µA

Gate Leakage Current

IGSS

VGS = ±20 V, VDS = 0 V

±10

µA

Gate Cut-off Voltage

VGS(off)

VDS = 10 V, ID = 1 mA

1.5

2.0

2.5

Forward Transfer Admittance

| yfs |VDS = 10 V, ID = 41 A30

RDS(on)1

VGS = 10 V, ID = 41 A7.5

9.5

Ω

Drain to Source On-state Resistance

RDS(on)2

VGS = 4V, ID = 41 A

10.5

Ω

Input Capacitance

Ciss

VDS = 10 V

4650

Output Capacitance

Coss

VGS = 0 V

780

Reverse Transfer Capacitance

Crss

f = 1 MHz

380

Turn-on Delay Time

td(on)

VDD = 30 V, ID = 41 A

100

Rise Time

VGS = 10 V

1550

Turn-off Delay Time

td(off)

RG = 10

Ω

280

Fall Time

420

Total Gate Charge

VDD = 48 V90

Gate to Source Charge

QGS

VGS = 10 V14

Gate to Drain Charge

QGD

ID = 82 A24

Body Diode Forward Voltage

VF(S-D)

IF = 82 A, VGS = 0 V1.0

Reverse Recovery Time

trr

IF = 82 A, VGS = 0 V60

Reverse Recovery Charge

Qrr

di/dt = 100 A/

µs

110

TEST CIRCUIT 3 GATE CHARGE

VGS = 20

→ 0 V

PG.

RG = 25

Ω

D.U.T.

VDD

TEST CIRCUIT 1 AVALANCHE CAPABILITY

PG.

D.U.T.

VDD

TEST CIRCUIT 2 SWITCHING TIME

PG.

IG = 2 mA

Ω

D.U.T.

VDD

IAS

VDS

BVDSS

Starting Tch

VGS

τ = 1 µs

Duty Cycle

≤ 1%

VGS

Wave Form

VGS

10%

90%

VGS

ton

toff

td(on)

td(off)

10%

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