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KC73125UBA Fiches technique(PDF) 4 Page - Samsung semiconductor

No de pièce KC73125UBA
Description  1/3 INCH CCD IMAGE SENSOR FOR EIA CAMERA
PDF  18 Pages
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Fabricant  SAMSUNG [Samsung semiconductor]
Site Internet  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KC73125UBA Fiches technique(HTML) 4 Page - Samsung semiconductor

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1/3 INCH CCD IMAGE SENSOR FOR EIA CAMERA
KC73125UBA
4
DC CHARACTERISTICS
CLOCK VOLTAGE CONDITIONS
Table 3. DC Characteristics
Item
Symbol
Min.
Typ.
Max.
Unit
Remark
Output stage drain bias
VDD
14.55
15.0
15.45
V
Output stage gate voltage
VGG
1.75
2.0
2.25
V
Output stage source voltage
VSS
Ground through 680
Ω
V
±5%
Substrate voltage adjustment range
VSUB
7.0
14.5
V
Fluctuation voltage range after substrate
voltage adjusted
∆V
SUB
-3
3
%
Protection circuit bias voltage
VL
The lowest vertical clock level
Output stage drain current
IDD
2.5
mA
Table 4. Clock Voltage Conditions
Item
Symbol
Min.
Typ.
Max.
Unit
Remark
Read-out clock voltage
VVH1, VVH3
14.55
15.0
15.45
V
High level
Vertical transfer clock voltage
VVM1 ~ VVM4
-0.2
0.0
0.2
V
Middle
VVL1 ~ VVL4
-9.5
-9.0
-8.5
V
Low
Horizontal transfer clock voltage
VHH1, VHH2
4.75
5.0
5.25
V
High
VHL1, VHL2
-0.2
0.0
0.2
V
Low
Charge reset clock voltage
VRSH
4.75
5.0
5.25
V
High
VRSL
-0.2
0.0
0.2
V
Low
Substrate clock voltage
VΦSUB
20
23.0
25
V
Shutter



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