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STM32F103XC Fiches technique(PDF) 57 Page - STMicroelectronics |
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STM32F103XC Fiches technique(HTML) 57 Page - STMicroelectronics |
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57 / 118 page ![]() STM32F103xC, STM32F103xD, STM32F103xE Electrical characteristics 57/118 5.3.9 Memory characteristics Flash memory The characteristics are given at TA = −40 to 105 °C unless otherwise specified. Table 29. Flash memory endurance and data retention Table 28. Flash memory characteristics Symbol Parameter Conditions Min Typ Max(1) 1. Values based on characterization and not tested in production. Unit tprog Word programming time TA = −40 to +105 °C 40 52.5 70 µs tERASE Page (2 KB) erase time TA = −40 to +105 °C 20 40 ms tME Mass erase time TA = −40 to +105 °C 20 40 ms IDD Supply current Read mode fHCLK = 72 MHz with 2 wait states, VDD = 3.3 V 28 mA Write mode fHCLK = 72 MHz, VDD = 3.3 V 7mA Erase mode fHCLK = 72 MHz, VDD = 3.3 V 5mA Power-down mode / Halt, VDD = 3.0 to 3.6 V 50 µA Vprog Programming voltage 2 3.6 V Symbol Parameter Conditions Value Unit Min(1) 1. Values based on characterization not tested in production. Typ Max NEND Endurance TBD(2) 2. TBD = to be determined. kcycles tRET Data retention TA = 85 °C, 1000 cycles 30 Years TA = 105 °C, 1000 cycles 10 |
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