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AM29BDS640G Fiches technique(PDF) 13 Page - Advanced Micro Devices |
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AM29BDS640G Fiches technique(HTML) 13 Page - Advanced Micro Devices |
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13 / 77 page ![]() May 9, 2006 25903C2 Am29BDS640G 11 Data Sheet Ordering Information The order number (Valid Combination) is formed by the following: Valid Combinations Valid Combinations list configurations planned to be supported in volume for this device. Consult the local AMD sales office to confirm availability of specific valid combinations and to check on newly released combinations. Note: For the Am29BDS640G, the last digit of the speed grade specifies the VIO range of the device. Speed options ending in “8” and “9” (e.g., D8, D9) indicate a 1.8 Volt VIO range. Speed grades ending in “3” and “4” (e.g., D3, D4) indicate a 3.0 Volt VIO range. Am29BDS640G T D 8 WS I TEMPERATURE RANGE I = Industrial (–40 °C to +85°C) PACKAGE TYPE WS = 80-Ball Fine-Pitch Grid Array (FBGA) 0.80 mm pitch, 11 x 12 mm package (FBE080) VIO AND HANDSHAKING FEATURES 8 = 1.8 V VIO, reduced wait-state handshaking 9 = 1.8 V VIO, standard handshaking 3= 3 V VIO, reduced wait-state handshaking 4= 3 V VIO, standard handshaking CLOCK RATE/ASYNCHRONOUS SPEED D = 54 MHz/70 ns C = 40 MHz/90 ns BOOT CODE SECTOR ARCHITECTURE T = Top boot sector B = Bottom boot sector DEVICE NUMBER/DESCRIPTION Am29BDS640G 64 Megabit (4 M x 16-Bit) CMOS Flash Memory, Simultaneous Read/Write, Burst Mode Flash Memory, 1.8 Volt-only Read, Program, and Erase Valid Combinations Burst Frequency (MHz) VIO Range Order Number Package Marking Am29BDS640GTD8 Am29BDS640GBD8 WSI BS640GTD8V BS640GBD8V 54 1.65–1.95V Am29BDS640GTD9 Am29BDS640GBD9 BS640GTD9V BS640GBD9V Am29BDS640GTC8 Am29BDS640GBC8 BS640GTC8V BS640GBC8V 40 Am29BDS640GTC9 Am29BDS640GBC9 BS640GTC9V BS640GBC9V Am29BDS640GTD3 Am29BDS640GBD3 WSI BS640GTD3V BS640GBD3V 54 2.7–3.15V Am29BDS640GTD4 Am29BDS640GBD4 BS640GTD4V BS640GBD4V Am29BDS640GTC3 Am29BDS640GBC3 BS640GTC3V BS640GBC3V 40 Am29BDS640GTC4 Am29BDS640GBC4 BS640GTC4V BS640GBC4V |
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