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MIC4600YML-TR Fiches technique(PDF) 10 Page - Microchip Technology

No de pièce MIC4600YML-TR
Description  28V Half-Bridge MOSFET Driver
PDF  26 Pages
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Fabricant  MICROCHIP [Microchip Technology]
Site Internet  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

MIC4600YML-TR Fiches technique(HTML) 10 Page - Microchip Technology

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MIC4600
DS20005584B-page 10
 2016-2020 Microchip Technology Inc.
4.0
FUNCTIONAL DESCRIPTION
The MIC4600 is a 28V half-bridge MOSFET driver with
integrated LDO. It is designed to independently drive
both high-side and low-side N-Channel MOSFETs. The
LDO eliminates the need for a second VDD supply
voltage by generating the gate drive voltage from the
input supply. The MIC4600 offers a wide 4.5V to 28V
operating supply range. Refer to the diagram above.
The high and low-side drivers contain an input buffer
with hysteresis and an output buffer. The high-side
output buffer includes a high-speed level-shifting circuit
that is referenced to the HS pin. An external diode is
used to supply VDD to the bootstrap circuit that provides
the drive voltage for the high-side output.
4.1
Startup and UVLO
The UVLO circuit monitors VDD and inhibits both
drivers in a low state when the supply voltage is below
the UVLO threshold. Hysteresis in the UVLO circuit
prevents noise and circuit impedance from causing
chatter during turn-on.
4.2
Enable Input
A logic high on the enable pin (EN) allows normal
operation to occur. Conversely, when a logic low is
applied on the enable pin, the high and low-side driver
outputs turn-off and the driver enters a low supply
current shutdown mode. Do not leave floating.
4.3
Dead-Time Delay
Shoot-through occurs in a half-bridge or synchronous
buck topology when both the high and low-side
MOSFETs conduct at the same time. This condition is
caused by driver propagation delay variation and
MOSFET turn on/off times. Shoot-through causes an
increase in MOSFET power dissipation, circuit noise,
and interference with power circuit operation. A resistor
on the DELAY pin sets the break-before-make delay
time between the high- and low-side MOSFETs. See
the Applications section for additional information.
4.4
Input Stage
Both the HSI and LSI pins are referenced to the AGND
pin. The voltage state of the input signal does not
change the quiescent current draw of the driver.
The MIC4600 has a TTL-compatible input range and
can be used with input signals with amplitude less than
or equal to the VDD voltage. A small amount of
hysteresis improves the noise immunity of the driver
inputs.
4.5
Low-Side Driver
Figure 4-1 shows a block diagram of the low-side
driver. The low-side driver is designed to drive a ground
(PGND pin) referenced N-channel MOSFET. The
low-side gate drive voltage equals VDD, which is
typically 5V.
A low driver impedance allows the external MOSFET to
be turned on and off quickly. The rail-to-rail drive
capability of the output ensures a low RDS(ON) from the
external MOSFET.
A high level applied to the LSI pin causes the upper
driver MOSFET to turn on and VDD voltage is applied
to the gate of the external MOSFET. A low level on the
LSI pin turns off the upper driver and turns on the
low-side driver to ground the gate of the external
MOSFET.
EN
FAULT
HSI
LSI
UVLO
MIC4600
LINEAR
REGULATOR
VIN
BST
SW
AGND
AGND
DH
DL
DELAY
ANTI-SHOOT THRU
VDD
PGND
CONTROL
LOGIC
TIMER
AVDD
VDD



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