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LM5100A Fiches technique(PDF) 12 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor. Click here to check the latest version.
No de pièce LM5100A
Description  3A, 2A and 1A High Voltage High-Side and Low-Side Gate Drivers
PDF  15 Pages
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Fabricant  NSC [National Semiconductor (TI)]
Site Internet  http://www.national.com
Logo NSC - National Semiconductor (TI)

LM5100A Fiches technique(HTML) 12 Page - National Semiconductor (TI)

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Power Dissipation Considerations
(Continued)
Larger capacitive loads require more energy to recharge the
bootstrap capacitor resulting in more losses. Higher input
voltages (V
IN) to the half bridge result in higher reverse
recovery losses. The following plot was generated based on
calculations and lab measurements of the diode recovery
time and current under several operating conditions. This
can be useful for approximating the diode power dissipation.
The total IC power dissipation can be estimated from the
previous plots by summing the gate drive losses with the
bootstrap diode losses for the intended application.
Diode Power Dissipation V
IN = 50V
20203106
www.national.com
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