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LM5100A Fiches technique(PDF) 4 Page - National Semiconductor (TI) |
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LM5100A Fiches technique(HTML) 4 Page - National Semiconductor (TI) |
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4 / 15 page ![]() Absolute Maximum Ratings (Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. VDD to VSS −0.3V to +18V HB to HS −0.3V to +18V LI or HI Input −0.3V to V DD +0.3V LO Output −0.3V to V DD +0.3V HO Output V HS −0.3V to VHB +0.3V HS to VSS (Note 6) −5V to +100V HB to VSS 118V Junction Temperature +150˚C Storage Temperature Range −55˚C to +150˚C ESD Rating HBM (Note 2) 2 kV Recommended Operating Conditions VDD +9V to +14V HS −1V to 100V HB V HS +8V to VHS +14V HS Slew Rate < 50 V/ns Junction Temperature −40˚C to +125˚C Electrical Characteristics Limits in standard type are for T J = 25˚C only; limits in boldface type apply over the junction temperature (TJ) range of -40˚C to +125˚C. Minimum and Maximum limits are guaranteed through test, design, or statistical correlation. Typical values represent the most likely parametric norm at T J = 25˚C, and are provided for reference purposes only. Unless otherwise specified, VDD = V HB = 12V, VSS =VHS = 0V, No Load on LO or HO (Note 4). Symbol Parameter Conditions Min Typ Max Units SUPPLY CURRENTS I DD VDD Quiescent Current, LM5100A/B/C LI = HI = 0V 0.1 0.2 mA VDD Quiescent Current, LM5101A/B/C LI = HI = 0V 0.25 0.4 I DDO VDD Operating Current f = 500 kHz 2.0 3 mA I HB Total HB Quiescent Current LI = HI = 0V 0.06 0.2 mA I HBO Total HB Operating Current f = 500 kHz 1.6 3 mA I HBS HB to VSS Current, Quiescent HS = HB = 100V 0.1 10 µA I HBSO HB to VSS Current, Operating f = 500 kHz 0.4 mA INPUT PINS V IL Input Voltage Threshold LM5100A/B/C Rising Edge 4.5 5.4 6.3 V V IL Input Voltage Threshold LM5101A/B/C Rising Edge 1.3 1.8 2.3 V V IHYS Input Voltage Hysteresis LM5100A/B/C 500 mV V IHYS Input Voltage Hysteresis LM5101A/B/C 50 mV R I Input Pulldown Resistance 100 200 400 k Ω UNDER VOLTAGE PROTECTION V DDR VDD Rising Threshold 6.0 6.9 7.4 V V DDH VDD Threshold Hysteresis 0.5 V V HBR HB Rising Threshold 5.7 6.6 7.1 V V HBH HB Threshold Hysteresis 0.4 V BOOT STRAP DIODE V DL Low-Current Forward Voltage I VDD-HB = 100 µA 0.52 0.85 V V DH High-Current Forward Voltage I VDD-HB = 100 mA 0.8 1 V R D Dynamic Resistance LM5100A/B/C, LM5101A/B/C I VDD-HB = 100 mA 1.0 1.65 Ω LO & HO GATE DRIVER V OL Low-Level Output Voltage LM5100A/LM5101A I HO =ILO = 100 mA 0.12 0.25 V Low-Level Output Voltage LM5100B/LM5101B 0.16 0.4 Low-Level Output Voltage LM5100C/LM5101C 0.28 0.65 www.national.com 4 |
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