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LM5100A Fiches technique(PDF) 4 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor. Click here to check the latest version.
No de pièce LM5100A
Description  3A, 2A and 1A High Voltage High-Side and Low-Side Gate Drivers
PDF  15 Pages
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Fabricant  NSC [National Semiconductor (TI)]
Site Internet  http://www.national.com
Logo NSC - National Semiconductor (TI)

LM5100A Fiches technique(HTML) 4 Page - National Semiconductor (TI)

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Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
VDD to VSS
−0.3V to +18V
HB to HS
−0.3V to +18V
LI or HI Input
−0.3V to V
DD +0.3V
LO Output
−0.3V to V
DD +0.3V
HO Output
V
HS −0.3V to VHB +0.3V
HS to VSS (Note 6)
−5V to +100V
HB to VSS
118V
Junction Temperature
+150˚C
Storage Temperature Range
−55˚C to +150˚C
ESD Rating HBM (Note 2)
2 kV
Recommended Operating
Conditions
VDD
+9V to +14V
HS
−1V to 100V
HB
V
HS +8V to VHS +14V
HS Slew Rate
< 50 V/ns
Junction Temperature
−40˚C to +125˚C
Electrical Characteristics
Limits in standard type are for T
J = 25˚C only; limits in boldface type apply over the junction temperature (TJ) range of -40˚C to
+125˚C. Minimum and Maximum limits are guaranteed through test, design, or statistical correlation. Typical values represent
the most likely parametric norm at T
J = 25˚C, and are provided for reference purposes only. Unless otherwise specified, VDD =
V
HB = 12V, VSS =VHS = 0V, No Load on LO or HO (Note 4).
Symbol
Parameter
Conditions
Min
Typ
Max
Units
SUPPLY CURRENTS
I
DD
VDD Quiescent Current, LM5100A/B/C
LI = HI = 0V
0.1
0.2
mA
VDD Quiescent Current, LM5101A/B/C
LI = HI = 0V
0.25
0.4
I
DDO
VDD Operating Current
f = 500 kHz
2.0
3
mA
I
HB
Total HB Quiescent Current
LI = HI = 0V
0.06
0.2
mA
I
HBO
Total HB Operating Current
f = 500 kHz
1.6
3
mA
I
HBS
HB to VSS Current, Quiescent
HS = HB = 100V
0.1
10
µA
I
HBSO
HB to VSS Current, Operating
f = 500 kHz
0.4
mA
INPUT PINS
V
IL
Input Voltage Threshold LM5100A/B/C
Rising Edge
4.5
5.4
6.3
V
V
IL
Input Voltage Threshold LM5101A/B/C
Rising Edge
1.3
1.8
2.3
V
V
IHYS
Input Voltage Hysteresis LM5100A/B/C
500
mV
V
IHYS
Input Voltage Hysteresis LM5101A/B/C
50
mV
R
I
Input Pulldown Resistance
100
200
400
k
UNDER VOLTAGE PROTECTION
V
DDR
VDD Rising Threshold
6.0
6.9
7.4
V
V
DDH
VDD Threshold Hysteresis
0.5
V
V
HBR
HB Rising Threshold
5.7
6.6
7.1
V
V
HBH
HB Threshold Hysteresis
0.4
V
BOOT STRAP DIODE
V
DL
Low-Current Forward Voltage
I
VDD-HB = 100 µA
0.52
0.85
V
V
DH
High-Current Forward Voltage
I
VDD-HB = 100 mA
0.8
1
V
R
D
Dynamic Resistance LM5100A/B/C,
LM5101A/B/C
I
VDD-HB = 100 mA
1.0
1.65
LO & HO GATE DRIVER
V
OL
Low-Level Output Voltage
LM5100A/LM5101A
I
HO =ILO = 100 mA
0.12
0.25
V
Low-Level Output Voltage
LM5100B/LM5101B
0.16
0.4
Low-Level Output Voltage
LM5100C/LM5101C
0.28
0.65
www.national.com
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