SPC584G80C3 datasheet(37/139 Pages) STMICROELECTRONICS

37 / 139 page

DS11758 Rev 6

37/139

SPC584Gx, SPC58EGx, SPC58NGx

Electrical characteristics

IRMS_V

RMS I/O current for VERY

STRONG configuration

CL =25pF, 50MHz,

VDD = 5.0 V ± 10%

——

CL =50pF, 25MHz,

VDD = 5.0 V ± 10%

——

CL =25pF, 50MHz,

VDD = 3.3 V ± 10%

——

CL =25pF, 25MHz,

VDD = 3.3 V ± 10%

——

Dynamic consumption(3)

IDYN_SEG

Sum of all the dynamic and DC

I/O current within a supply

segment

VDD = 5.0 V ± 10%

—

195

VDD = 3.3 V ± 10%

—

150

IDYN_W

Dynamic I/O current for WEAK

configuration

CL =25pF, VDD =5.0 V ±

10%

—

16.7

CL =50pF, VDD =5.0 V ±

10%

—

16.8

CL =25pF, VDD =3.3 V ±

10%

—

12.9

CL =50pF, VDD =3.3 V ±

10%

—

12.9

IDYN_M

Dynamic I/O current for

MEDIUM configuration

CL =25pF, VDD =5.0 V ±

10%

—

18.2

CL =50pF, VDD =5.0 V ±

10%

—

18.4

CL =25pF, VDD =3.3 V ±

10%

—

14.3

CL =50pF, VDD =3.3 V ±

10%

—

16.4

IDYN_S

Dynamic I/O current for

STRONG configuration

CL =25pF, VDD =5.0 V ±

10%

——

CL =50pF, VDD =5.0 V ±

10%

—

63.5

CL =25pF, VDD =3.3 V ±

10%

——

CL =50pF, VDD =3.3 V ±

10%

—

33.5

Table 17. I/O consumption (continued)

Symbol

Parameter

Conditions

Value(1)

Unit

Min

Typ

Max

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