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SPC584G80C3 Fiches technique(PDF) 17 Page - STMicroelectronics

No de pièce SPC584G80C3
Description  32-bit Power Architecture microcontroller for automotive ASIL-D applications
PDF  139 Pages
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

SPC584G80C3 Fiches technique(HTML) 17 Page - STMicroelectronics

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SPC584Gx, SPC58EGx, SPC58NGx
Electrical characteristics
18
IINJ
SR
T
Maximum DC
injection current
for each
analog/digital
PAD(7)
—–5
5
mA
TSTG
SR
T
Maximum non-
operating
Storage
temperature
range
–55
125
°C
TPAS
SR
C
Maximum
nonoperating
temperature
during passive
lifetime
—–55
150(8)
°C
TSTORAGE
SR
Maximum
storage time,
assembled part
programmed in
ECU
No supply; storage
temperature in
range –40 °C to
60 °C
20
years
TSDR
SR
T
Maximum solder
temperature Pb-
free packaged(9)
——
260
°C
MSL
SR
T
Moisture
sensitivity
level(10)
——
3
TXRAY dose
SR
T
Maximum
cumulated
XRAY dose
Typical range for
X-rays source
during
inspection:80 ÷
130 KV; 20 ÷
50
μA
——
1
grey
1. VDD_LV: allowed 1.335 V - 1.400 V for 60 seconds cumulative time at the given temperature profile. Remaining time allowed
1.260 V - 1.335 V for 10 hours cumulative time at the given temperature profile. Remaining time as defined in Section 4.3:
Operating conditions.
2. VDD_LV_BD: allowed 1.450 V - 1.500 V for 60 seconds cumulative time at the given temperature profile. Remaining time
allowed 1.375 V - 1.450 V for 10 hours cumulative time at maximum TJ = 125 °C. Remaining time as defined in Section 4.3:
Operating conditions.
3. VDD_HV: allowed 5.5 V – 6.0 V for 60 seconds cumulative time at the given temperature profile, for 10 hours cumulative
time with the device in reset at the given temperature profile. Remaining time as defined in Section 4.3: Operating
conditions.
4. The maximum input voltage on an I/O pin tracks with the associated I/O supply maximum. For the injection current
condition on a pin, the voltage will be equal to the supply plus the voltage drop across the internal ESD diode from I/O pin
to supply. The diode voltage varies greatly across process and temperature, but a value of 0.3 V can be used for nominal
calculations.
5. Relative value can be exceeded if design measures are taken to ensure injection current limitation (parameter IINJ).
Table 4. Absolute maximum ratings (continued)
Symbol
C
Parameter
Conditions
Value
Unit
Min
Typ
Max



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