MF4SAM3 datasheet(11/31 Pages) NXP

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NXP Semiconductors

MF4SAM3

MIFARE SAM AV3 secure access module

MF4SAM3

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Product short data sheet

Rev. 3.0 — 2 August 2019

COMPANY PUBLIC

561930

11 / 31

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

IILIH

Leakage input current at

input voltage beyond VDD

in "weak pull-up" input

mode

VDD < VI ≤ VDD + 0.3 V; -25 °C ≤

Tamb ≤ +85 °C;

Test conditions: VI = VDD + 0.3

VDD = VDD(max) of the respective

supply voltage class A, B or C;

Tamb = +85 °C

μA

-0.3 V ≤ VI < 0 V; -25 °C ≤ Tamb ≤

+30 °C

Test conditions: VI = -0.3 V;

VDD = VDD(max) of the respective

supply voltage class A, B or C;

Tamb = +30 °C

-50

μA

IILIL

Leakage input current at

input voltage below VSS in

"weak pull-up" input mode

-0.3 V ≤ VI < 0 V; +30 °C < Tamb

≤ +85 °C

Test conditions: VI = -0.3 V;

VDD = VDD(max) of the respective

supply voltage class A, B or C;

Tamb = +85 °C

-275

μA

IILIHQ

Leakage input current

at input voltage beyond

VDD (only in "quasi-

bidirectional" mode)

VDD < VI ≤ VDD + 0.3 V; -25 °C ≤

Tamb ≤ +85 °C

Test conditions: VI = VDD +

0.3 V; VDD = VDD(max) of the

respective supply voltage class

A, B or C;

Tamb = +85 °C

100

μA

-0.3 V ≤ VI < 0 V; -25 °C ≤ Tamb ≤

+30 °C

Test conditions: VI = -0.3 V;

VDD = VDD(max) of the respective

supply voltage class A, B or C;

Tamb = +30 °C

-75

μA

IILILQ

Leakage input current

at input voltage below

VSS (only in "quasi-

bidirectional" mode)

-0.3 V ≤ VI < 0 V; +30 °C < Tamb

≤ +85 °C

Test conditions: VI = -0.3 V;

VDD = VDD(max) of the respective

supply voltage class A, B or C;

Tamb = +85 °C

-300

μA

IOH = -20 μA;

Class A condition

[2]

3.8

0.7 VDD

VOH

HIGH level output voltage

IOH = -20 μA;

Class B or C condition

[2]

0.7 VDD

Class A or B condition;

IOL = 1.0 mA

0.3

VOL

LOW level output voltage

Class C condition;

IOL = 1.0 mA

IOL = 0.5 mA

0.3

0.15 VDD

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