MF4SAM3 datasheet(10/31 Pages) NXP

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NXP Semiconductors

MF4SAM3

MIFARE SAM AV3 secure access module

MF4SAM3

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Product short data sheet

Rev. 3.0 — 2 August 2019

COMPANY PUBLIC

561930

10 / 31

8 Static characteristics

8.1 Measurement conventions

Testing measurements are performed at the contact pads of the device under test. All

voltages are defined with respect to the ground contact pad VSS. All currents flowing into

the Smart Card IC are considered positive.

8.2 Levels and currents

Table 6. Electrical DC characteristics of Input/Output: IO1, IO2 and IO3

Conditions: VDD = 1.62 V to 5.5 V; VSS = 0 V; Tamb = -25 °C to +85 °C, unless otherwise specified

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VIH

HIGH level input voltage

0.7 VDD

VDD + 0.3 V

VIL

LOW level input voltage

-0.3

0.25 VDD V

IIH

HIGH level input current in

"weak pull-up" input mode

0.7 VDD ≤ VI ≤ VDD;

Test conditions for the maximum

absolute value:

IIH(max): VI = 0.7 VDD, VDD =

VDD(max) of the respective supply

voltage class A, B or C

-20

μA

IIL

LOW level input current

0 V ≤ VI ≤ 0.3 VDD;

Test conditions for the maximum

absolute value:

IIL(max): VI = 0 V, VDD = VDD(max)

of the respective supply voltage

class A, B or C

-50

μA

0.3 VDD < VI ≤ VDD;

Test conditions for the maximum

absolute value:

VI = 0.5 VDD, VDD = VDD(max) of

the respective supply voltage

class A, B or C

[1]

Class A

-300

μA

Class B

-250

μA

ITL

HIGH-to-LOW transition

input current (only in

"quasi-bidirectional" mode)

Class C

-200

μA

Input current in "weak pull-

up" input mode

0 V ≤ VI ≤ VDD;

Test conditions for the maximum

absolute value:

II(max): VI = 0 V, VDD = VDD(max)

of the respective supply voltage

class A, B or C

-50

μA

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