NXP Semiconductors

MF4SAM3

MIFARE SAM AV3 secure access module

MF4SAM3

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© NXP B.V. 2019. All rights reserved.

Product short data sheet

Rev. 3.0 — 2 August 2019

COMPANY PUBLIC

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6 Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to

VSS (ground = 0 V).

Symbol Parameter

Conditions

Min

Max

Unit

-0.5

+6.0

V

input voltage

any signal pad

-0.5

input current

pads IO1, IO2, IO3 and

TP1, TP2[1]

-

± 15.0

mA

output current

pads IO1, IO2, IO3 and

TP1, TP2[1]

-

± 15.0

mA

latch-up current

-

± 100

mA

pads VDD, VSS, CLK,

RST_N, IO1, IO2, IO3

[2] -

± 4.0

kV

electrostatic discharge

voltage (HBM)

TP1, TP2

[3] -

± 2.0

kV

electrostatic discharge

voltage (CDM)

all pads

[4] -

± 500

V

Total power dissipation

[5] -

1

W

Storage temperature

[6] -55

125

℃

[1]

If IO2 and IO3 are available.

[2]

In accordance with ANSI/ESDA/JEDEC JS-001-2011, ESDA/JEDEC Joint Standard for Electrostatic Discharge Sensitivity

Testing - Human Body Model (HBM) - Component Level.

[3]

Only available if enabled via OEF setting.

[4]

In accordance with JEDEC JESD22-C101 for Charged-Device Model (CDM).

[5]

Depending on appropriate thermal resistance of the package.

[6]

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Observe

precautions for handling electrostatic sensitive devices.

Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5,

JESD625-A or equivalent standards.