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ZSSC3123AI2R Fiches technique(PDF) 10 Page - Renesas Technology Corp |
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ZSSC3123AI2R Fiches technique(HTML) 10 Page - Renesas Technology Corp |
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10 / 67 page ![]() ZSSC3123 Datasheet © 2018 Integrated Device Technology, Inc. 10 August 16, 2018 5. Electrical Characteristics Table 4. Electrical Characteristics Symbol Parameter Conditions Minimum Typical Maximum Units Supply Current IDD Update Mode Current (varies with part configuration) [a] Best case settings: [b] Mult 1, 8-bit, 125ms Power Down 60 100 μA Worst case settings: Mult 1, 14-bit, 0ms Power Down 750 1100 IPDM Extra Current with PDM enabled [b] 150 μA ISLEEP Sleep Mode Current [a] -40 to 85°C 0.6 1 μA -40 to 125°C 1 3 μA Voltage Levels VPOR Power-On-Reset Level 1.6 1.7 2.2 V VREG Active Regulated Voltage Note: Regulated voltage can be measured on the Vcore pin. 2.4 2.55 2.7 V Capacitance-to-Digital Converter (CDC) RESCDC Resolution 8 14 Bits fMULT1 Excitation Frequency of External Capacitances C0 and C1 (for a system frequency fSYS) Mult 1 fSYS/2 kHz fMULT2 Mult 2 fSYS/4 kHz fMULT4 Mult 4 fSYS/8 kHz fMULT8 Mult 8 fSYS/16 kHz INLCDC Integral Nonlinearity (INL) [c] Mult 1, 10% to 90% input, 14-bit 0.2 % DNLCDC Differential Nonlinearity (DNL) [b] Mult 1, 10% to 90% input, 14-bit 0.9 LSB EEPROM nWRI_EEP Number of Erase/Write Cycles At 85 C 100k tWRI_EEP Data Retention At 100 C 10 Year Temperature Conversion RESTEMP Resolution in °C [b] -40 to 125°C, 8-bit mode 0.64 0.96 1.6 °C -40 to 125°C, 14-bit mode 0.01 0.015 0.025 INLCDC Nonlinearity First Order Fit [b], [d] -40 to 125°C ±0.5 ±1 °C INLCDC Nonlinearity Second Order Fit [b], [e] -40 to 125°C ±0.2 ±0.4 °C PSRTEMP Voltage Dependency [b] VSUPPLY > VREG+0.25V 0.03 0.1 °C/V 2.3V ≤ VSUPPLY ≤ VREG + 0.25V 1.25 2.25 |
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