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PCF2129 Fiches technique(PDF) 60 Page - NXP Semiconductors |
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PCF2129 Fiches technique(HTML) 60 Page - NXP Semiconductors |
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60 / 86 page ![]() PCF2129 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved. Product data sheet Rev. 7 — 19 December 2014 60 of 86 NXP Semiconductors PCF2129 Accurate RTC with integrated quartz crystal for industrial applications [1] For reliable oscillator start-up at power-on: VDD(po)min =VDD(min) +0.3 V. [2] Timer source clock = 1⁄60 Hz, level of pins SDA/CE, SDI, and SCL is VDD or VSS. [3] When the device is supplied by the VBAT pin instead of the VDD pin, the current values for IBAT are as specified for IDD under the same conditions. [4] The I2C-bus and SPI-bus interfaces of PCF2129 are 5 V tolerant. [5] Tested on sample basis. [6] For further information, see Figure 40. Power management Vth(sw)bat battery switch threshold voltage -2.5 -V Vth(bat)low low battery threshold voltage -2.5 -V Tamb =25 C 2.25 - 2.85 V Inputs[4] VI input voltage 0.5 - VDD +0.5 V VIL LOW-level input voltage - - 0.25VDD V Tamb = 20 C to +85 C; VDD > 2.0 V - - 0.3VDD V VIH HIGH-level input voltage 0.7VDD -- V ILI input leakage current VI =VDD or VSS -0 - A post ESD event 1- +1 A Ci input capacitance [5] -- 7 pF Outputs VO output voltage on pins CLKOUT, INT, referring to external pull-up 0.5 - +5.5 V on pin BBS 1.8 - 4.2 V on pin SDO 0.5 - VDD + 0.5 V VOH HIGH output voltage on pin SDO 0.8VDD -VDD V VOL LOW output voltage on pins CLKOUT, INT, and SDO VSS -0.2VDD V IOL LOW-level output current output sink current; VOL = 0.4 V on pin SDA/CE [6] 317 - mA on all other outputs 1.0 - - mA IOH HIGH-level output current output source current; on pin SDO; VOH = 3.8 V; VDD = 4.2 V 1.0 - - mA ILO output leakage current VO = VDD or VSS -0 - A post ESD event 1- +1 A Table 79. Static characteristics …continued VDD = 1.8 V to 4.2 V; VSS =0V; Tamb = 40 C to +85 C, unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit |
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