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PCF2129 Fiches technique(PDF) 60 Page - NXP Semiconductors

No de pièce PCF2129
Description  Accurate RTC with integrated quartz crystal for industrial applications
PDF  86 Pages
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Fabricant  PHILIPS [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PCF2129 Fiches technique(HTML) 60 Page - NXP Semiconductors

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PCF2129
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 7 — 19 December 2014
60 of 86
NXP Semiconductors
PCF2129
Accurate RTC with integrated quartz crystal for industrial applications
[1]
For reliable oscillator start-up at power-on: VDD(po)min =VDD(min) +0.3 V.
[2]
Timer source clock = 160 Hz, level of pins SDA/CE, SDI, and SCL is VDD or VSS.
[3]
When the device is supplied by the VBAT pin instead of the VDD pin, the current values for IBAT are as specified for IDD under the same
conditions.
[4]
The I2C-bus and SPI-bus interfaces of PCF2129 are 5 V tolerant.
[5]
Tested on sample basis.
[6]
For further information, see Figure 40.
Power management
Vth(sw)bat
battery switch threshold
voltage
-2.5
-V
Vth(bat)low
low battery threshold
voltage
-2.5
-V
Tamb =25 C
2.25
-
2.85
V
Inputs[4]
VI
input voltage
0.5
-
VDD +0.5
V
VIL
LOW-level input voltage
-
-
0.25VDD
V
Tamb = 20 C to +85 C;
VDD > 2.0 V
-
-
0.3VDD
V
VIH
HIGH-level input voltage
0.7VDD
--
V
ILI
input leakage current
VI =VDD or VSS
-0
-
A
post ESD event
1-
+1
A
Ci
input capacitance
[5] --
7
pF
Outputs
VO
output voltage
on pins CLKOUT, INT,
referring to external pull-up
0.5
-
+5.5
V
on pin BBS
1.8
-
4.2
V
on pin SDO
0.5
-
VDD + 0.5
V
VOH
HIGH output voltage
on pin SDO
0.8VDD
-VDD
V
VOL
LOW output voltage
on pins CLKOUT, INT, and
SDO
VSS
-0.2VDD
V
IOL
LOW-level output current
output sink current;
VOL = 0.4 V
on pin SDA/CE
[6] 317
-
mA
on all other outputs
1.0
-
-
mA
IOH
HIGH-level output current
output source current;
on pin SDO;
VOH = 3.8 V;
VDD = 4.2 V
1.0
-
-
mA
ILO
output leakage current
VO = VDD or VSS
-0
-
A
post ESD event
1-
+1
A
Table 79.
Static characteristics …continued
VDD = 1.8 V to 4.2 V; VSS =0V; Tamb = 40 C to +85 C, unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit



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