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AFT09MS007N Fiches technique(PDF) 12 Page - NXP Semiconductors

No de pièce AFT09MS007N
Description  High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET
PDF  28 Pages
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Fabricant  NXP [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo NXP - NXP Semiconductors

AFT09MS007N Fiches technique(HTML) 12 Page - NXP Semiconductors

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RF Device Data
Freescale Semiconductor, Inc.
AFT09MS007NT1
350–470 MHz UHF BROADBAND REFERENCE CIRCUIT
Zo =10 
f = 350 MHz
f = 470 MHz
Zload
Zsource
f = 350 MHz
f = 470 MHz
VDD =7.5 Vdc, IDQ = 200 mA, Pout =7.5 W
f
MHz
Zsource
Zload
350
2.7 + j6.6
3.5 + j4.2
370
3.3 + j6.2
3.7 + j4.2
390
3.1 + j5.4
3.5 + j4.0
410
2.6 + j6.1
3.5 + j5.0
430
2.1 + j7.1
3.6 + j5.9
450
2.2 + j7.3
3.6 + j5.6
470
2.0 + j7.7
3.0 + j5.8
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured from
drain to ground.
Figure 15. UHF Broadband Series Equivalent Source and Load Impedance — 350–470 MHz
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Zsource
Zload
50 
50 



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