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AFT09MS007N Fiches technique(PDF) 11 Page - NXP Semiconductors

No de pièce AFT09MS007N
Description  High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET
PDF  28 Pages
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Fabricant  NXP [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo NXP - NXP Semiconductors

AFT09MS007N Fiches technique(HTML) 11 Page - NXP Semiconductors

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AFT09MS007NT1
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RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — 350–470 MHz UHF BROADBAND
REFERENCE CIRCUIT
320
Gps
f, FREQUENCY (MHz)
Figure 12. Power Gain, Drain Efficiency and Output Power versus
Frequency at a Constant Input Power
12
20
5
90
80
70
60
8
7
6
D
19
17
13
360
380
420
440
480 500
50
VDD =7.5 Vdc
Pin =0.20 W
IDQ = 200 mA
Pout
18
16
15
14
340
400
460
0
0
VGS, GATE--SOURCE VOLTAGE (VOLTS)
Figure 13. Output Power versus Gate--Source Voltage
1
2
34
10
2
8
4
f = 410 MHz
VDD =7.5 Vdc, Pin =0.25 W
0
0
Detail A
1.2
2
0.8
0.4
0.6
0.4
0.8
f = 410 MHz
Detail A
VDD =7.5 Vdc
Pin =0.1 W
VGS, GATE--SOURCE VOLTAGE (VOLTS)
6
12
14
VDD =7.5 Vdc, Pin =0.1 W
0.2
VDD =7.5 Vdc
Pin =0.25 W
5
1.6
Figure 14. Power Gain, Drain Efficiency and Output
Power versus Input Power and Frequency
Pin, INPUT POWER (WATTS)
13
16
15
0.01
1
Gps
7.5
20
10
0
2.5
19
18
17
20
40
60
80
0.1
Pout
VDD =7.5 Vdc
IDQ = 200 mA
14
470 MHz
D
f = 470 MHz
350 MHz
470 MHz
410 MHz
350 MHz
350 MHz
410 MHz
12
5
410 MHz



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