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AFT09MS007N Fiches technique(PDF) 11 Page - NXP Semiconductors |
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AFT09MS007N Fiches technique(HTML) 11 Page - NXP Semiconductors |
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11 / 28 page ![]() AFT09MS007NT1 11 RF Device Data Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS — 350–470 MHz UHF BROADBAND REFERENCE CIRCUIT 320 Gps f, FREQUENCY (MHz) Figure 12. Power Gain, Drain Efficiency and Output Power versus Frequency at a Constant Input Power 12 20 5 90 80 70 60 8 7 6 D 19 17 13 360 380 420 440 480 500 50 VDD =7.5 Vdc Pin =0.20 W IDQ = 200 mA Pout 18 16 15 14 340 400 460 0 0 VGS, GATE--SOURCE VOLTAGE (VOLTS) Figure 13. Output Power versus Gate--Source Voltage 1 2 34 10 2 8 4 f = 410 MHz VDD =7.5 Vdc, Pin =0.25 W 0 0 Detail A 1.2 2 0.8 0.4 0.6 0.4 0.8 f = 410 MHz Detail A VDD =7.5 Vdc Pin =0.1 W VGS, GATE--SOURCE VOLTAGE (VOLTS) 6 12 14 VDD =7.5 Vdc, Pin =0.1 W 0.2 VDD =7.5 Vdc Pin =0.25 W 5 1.6 Figure 14. Power Gain, Drain Efficiency and Output Power versus Input Power and Frequency Pin, INPUT POWER (WATTS) 13 16 15 0.01 1 Gps 7.5 20 10 0 2.5 19 18 17 20 40 60 80 0.1 Pout VDD =7.5 Vdc IDQ = 200 mA 14 470 MHz D f = 470 MHz 350 MHz 470 MHz 410 MHz 350 MHz 350 MHz 410 MHz 12 5 410 MHz |
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