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AFT09MS007N Fiches technique(PDF) 16 Page - NXP Semiconductors |
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AFT09MS007N Fiches technique(HTML) 16 Page - NXP Semiconductors |
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16 / 28 page ![]() 16 RF Device Data Freescale Semiconductor, Inc. AFT09MS007NT1 TYPICAL CHARACTERISTICS — 450–520 MHz UHF BROADBAND REFERENCE CIRCUIT 440 Gps f, FREQUENCY (MHz) Figure 18. Power Gain, Output Power and Drain Efficiency versus Frequency at a Constant Input Power — 7.5 V 12 20 7 90 80 70 60 10 9 8 D 19 17 13 460 470 490 500 520 530 50 VDD =7.5 Vdc Pin =0.25 W IDQ = 150 mA Pout 18 16 15 14 450 480 510 0 0 VGS, GATE--SOURCE VOLTAGE (VOLTS) Figure 19. Output Power versus Gate--Source Voltage 16 1 2 34 10 2 8 4 f = 485 MHz VDD =7.5 Vdc, Pin =0.25 W 0 0 Detail A 7 12 3 4 6 5 4 8 f = 485 MHz Detail A VDD =7.5 Vdc Pin =0.1 W VGS, GATE--SOURCE VOLTAGE (VOLTS) 6 12 14 VDD =7.5 Vdc, Pin =0.1 W 3 2 1 VDD =7.5 Vdc Pin =0.25 W Figure 20. Power Gain, Output Power and Drain Efficiency versus Input Power and Frequency Pin, INPUT POWER (WATTS) 12 15 14 0.03 1 f = 520 MHz Gps 8 20 12 0 4 18 17 16 19 40 60 80 0.1 Pout VDD =7.5 Vdc IDQ = 150 mA 13 485 MHz 450 MHz 450 MHz 450 MHz 520 MHz 485 MHz D 520 MHz 485 MHz |
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