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AFT09MS007N Fiches technique(PDF) 16 Page - NXP Semiconductors

No de pièce AFT09MS007N
Description  High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET
PDF  28 Pages
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Fabricant  NXP [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo NXP - NXP Semiconductors

AFT09MS007N Fiches technique(HTML) 16 Page - NXP Semiconductors

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RF Device Data
Freescale Semiconductor, Inc.
AFT09MS007NT1
TYPICAL CHARACTERISTICS — 450–520 MHz UHF BROADBAND
REFERENCE CIRCUIT
440
Gps
f, FREQUENCY (MHz)
Figure 18. Power Gain, Output Power and Drain Efficiency versus
Frequency at a Constant Input Power — 7.5 V
12
20
7
90
80
70
60
10
9
8
D
19
17
13
460
470
490
500
520 530
50
VDD =7.5 Vdc
Pin =0.25 W
IDQ = 150 mA
Pout
18
16
15
14
450
480
510
0
0
VGS, GATE--SOURCE VOLTAGE (VOLTS)
Figure 19. Output Power versus Gate--Source Voltage
16
1
2
34
10
2
8
4
f = 485 MHz
VDD =7.5 Vdc, Pin =0.25 W
0
0
Detail A
7
12
3
4
6
5
4
8
f = 485 MHz
Detail A
VDD =7.5 Vdc
Pin =0.1 W
VGS, GATE--SOURCE VOLTAGE (VOLTS)
6
12
14
VDD =7.5 Vdc, Pin =0.1 W
3
2
1
VDD =7.5 Vdc
Pin =0.25 W
Figure 20. Power Gain, Output Power and Drain
Efficiency versus Input Power and Frequency
Pin, INPUT POWER (WATTS)
12
15
14
0.03
1
f = 520 MHz
Gps
8
20
12
0
4
18
17
16
19
40
60
80
0.1
Pout
VDD =7.5 Vdc
IDQ = 150 mA
13
485 MHz
450 MHz
450 MHz
450 MHz
520 MHz
485 MHz
D
520 MHz
485 MHz



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