AFT09MS007N datasheet(21/28 Pages) NXP

21 / 28 page

AFT09MS007NT1

RF Device Data

Freescale Semiconductor, Inc.

TYPICAL CHARACTERISTICS — 760–860 MHz BROADBAND

REFERENCE CIRCUIT

740

Gps

f, FREQUENCY (MHz)

Figure 24. Power Gain, Output Power and Drain Efficiency versus

Frequency at a Constant Input Power — 7.5 V

D

760

780

820

840

860

880

VDD =7.5 Vdc, Pin =0.25 W,IDQ = 150 mA

Pout

800

VGS, GATE--SOURCE VOLTAGE (VOLTS)

Figure 25. Output Power versus Gate--Source Voltage

f = 810 MHz

VDD =7.5 Vdc, Pin =0.25 W

Detail A

f = 810 MHz

Detail A

VDD =7.5 Vdc

Pin =0.1 W

VGS, GATE--SOURCE VOLTAGE (VOLTS)

VDD =7.5 Vdc, Pin =0.1 W

VDD =7.5 Vdc

Pin =0.25 W

0.5

1.5

2.5

3.5

Figure 26. Power Gain, Output Power and Drain

Efficiency versus Input Power and Frequency

Pin, INPUT POWER (WATTS)

00.6

Gps

0.1

Pout

VDD =7.5 Vdc

IDQ = 150 mA

D

810 MHz

f = 860 MHz

0.2

0.3

0.4

0.5

760 MHz

810 MHz 860 MHz

760 MHz

860 MHz

760 MHz

810 MHz

AFT09MS007N Fiches technique(PDF) 21 Page - NXP Semiconductors

AFT09MS007N Fiches technique(HTML) 21 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28

Fiches technique Télécharger

Lien URL