MB9BF412RPMC-G-JNE2 datasheet(99/112 Pages) CYPRESS

99 / 112 page

Document Number: 002-05615 Rev. *D

Page

99 of 112

MB9B410R Series

12.7

MainFlash Memory Write/Erase Characteristics

12.7.1

Write / Erase time

(VCC = 2.7V to 5.5V, TA = - 40°C to + 85°C)

Parameter

Value

Unit

Remarks

Typ*

Max*

Sector erase

time

Large Sector

0.7

3.7

Includes write time prior to internal erase

Small Sector

0.3

1.1

Half word (16-bit)

write time

384

μs

Not including system-level overhead time

Chip erase time

38.4

Includes write time prior to internal erase

*: The typical value is immediately after shipment, the maximum value is guarantee value under 100,000 cycle of erase/write.

12.7.2

Erase/write cycles and data hold time

Erase/write cycles (cycle)

Data hold time (year)

Remarks

1,000

20*

10,000

10*

100,000

*: At average + 85°C

12.8

WorkFlash Memory Write/Erase Characteristics

12.8.1

Write / Erase time

(VCC

= 2.7V to 5.5V, TA = - 40°C to + 85°C)

Parameter

Value

Unit

Remarks

Typ*

Max*

Sector erase time

0.3

1.5

Includes write time prior to internal erase

Half word (16-bit)

write time

384

μs

Not including system-level overhead time

Chip erase time

1.2

Includes write time prior to internal erase

*: The typical value is immediately after shipment, the maximum value is guarantee value under 10,000 cycle of erase/write.

12.8.2

Erase/write cycles and data hold time

Erase/write cycles (cycle)

Data hold time (year)

Remarks

1,000

20*

10,000

10*

*: At average + 85°C

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