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STM32F745ZE Fiches technique(PDF) 175 Page - STMicroelectronics |
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STM32F745ZE Fiches technique(HTML) 175 Page - STMicroelectronics |
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175 / 227 page ![]() DocID027590 Rev 4 175/227 STM32F745xx STM32F746xx Electrical characteristics 195 Figure 61. Asynchronous multiplexed PSRAM/NOR write waveforms Table 94. Asynchronous multiplexed PSRAM/NOR write timings(1) Symbol Parameter Min Max Unit tw(NE) FMC_NE low time 4THCLK−0.5 4THCLK+1.5 ns tv(NWE_NE) FMC_NEx low to FMC_NWE low THCLK−1THCLK+0.5 tw(NWE) FMC_NWE low time 2THCLK−0.5 2THCLK+0.5 th(NE_NWE) FMC_NWE high to FMC_NE high hold time THCLK - tv(A_NE) FMC_NEx low to FMC_A valid - 0 tv(NADV_NE) FMC_NEx low to FMC_NADV low 0 0.5 tw(NADV) FMC_NADV low time THCLK−0.5 THCLK+ 1.5 th(AD_NADV) FMC_AD(adress) valid hold time after FMC_NADV high) THCLK−2- th(A_NWE) Address hold time after FMC_NWE high THCLK - th(BL_NWE) FMC_BL hold time after FMC_NWE high THCLK−2- tv(BL_NE) FMC_NEx low to FMC_BL valid - 0 tv(Data_NADV) FMC_NADV high to Data valid - THCLK +2 th(Data_NWE) Data hold time after FMC_NWE high THCLK +0.5 - |
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