BSP612P datasheet(3/9 Pages) INFINEON

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BSP612P

OptiMOS™-P Small-Signal-Transistor

Symbol Conditions

Unit

min.

typ.

max.

Dynamic characteristics

Input capacitance

C iss

814

1083

Output capacitance

C oss

248

330

Reverse transfer capacitance

Crss

109

163

Turn-on delay time

t d(on)

8.3

12.5

Rise time

t r

10.4

15.6

Turn-off delay time

t d(off)

43.2

64.8

Fall time

t f

11.3

17.0

Gate Charge Characteristics

Gate to source charge

Q gs

-2.42

-3.2

Gate to drain charge

Q gd

-10.1

-15.2

Gate charge total

Q g

-26.3

-39.4

Gate plateau voltage

V plateau

-3.1

Reverse Diode

Diode continous forward current

I S

-3.0

Diode pulse current

I S,pulse

-12

Diode forward voltage

V SD

V GS=0 V, I F=-3 A,

0.80

1.1

Reverse recovery time

t rr

44.8

67.2

Reverse recovery charge

Q rr

62.9

94.4

2) Defined by design. Not subjected to production test

V R=-30 V, I F=-3 A,

di F/dt =100 A/µs

T A=25 °C

Values

V GS=0 V, V DS=-25 V,

f =1 MHz

V DD=-30 V, V GS=-

10 V, I D=-3 A,

R G,ext=2.7 W

V DD=-48 V, I D=-3 A,

V GS=0 to -10 V

Rev 2.0

page 3

2015-10-07

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