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BFQ591 Fiches technique(PDF) 7 Page - NXP Semiconductors |
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BFQ591 Fiches technique(HTML) 7 Page - NXP Semiconductors |
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7 / 11 page ![]() NXP Semiconductors Product specification NPN 7 GHz wideband transistor BFQ591 handbook, halfpage 040 80 IC (mA) dim (dB) 120 −30 −40 −60 −70 −50 MLD802 Fig.9 Intermodulation distortion as function of collector current; typical values. Vo = 700 mV; VCE = 12 V; Tamb =25 °C; f(p+q+r) = 793.25 MHz. handbook, halfpage 040 80 IC (mA) d2 (dB) 120 −30 −80 −40 −50 −60 −70 MLD803 Fig.10 Second order intermodulation distortion as function of collector current; typical values. Vo = 316 mV; VCE = 12 V; f(p+q) = 810 MHz. Rev. 04 - 2 October 2007 7 of 11 |
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