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BFQ591 Fiches technique(PDF) 6 Page - NXP Semiconductors |
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BFQ591 Fiches technique(HTML) 6 Page - NXP Semiconductors |
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6 / 11 page ![]() NXP Semiconductors Product specification NPN 7 GHz wideband transistor BFQ591 handbook, halfpage 0 Gmax 40 80 IC (mA) gain (dB) 120 25 0 20 15 10 5 MLD799 GUM Fig.6 Gain as a function of collector current; typical values. VCE = 12 V; f = 900 MHz. handbook, halfpage 0 MSG GUM 40 80 IC (mA) gain (dB) 120 10 0 8 6 4 2 MLD800 Fig.7 Gain as a function of collector current; typical values. VCE = 12 V; f = 2 GHz. handbook, halfpage 40 0 20 30 10 MLD801 10 f (MHz) gain (dB) 104 103 102 GUM MSG MSG Gmax Fig.8 Gain as a function of frequency; typical values. IC = 70 mA; VCE =12V. Rev. 04 - 2 October 2007 6 of 11 |
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