BFQ591 datasheet(4/11 Pages) PHILIPS

4 / 11 page

NXP Semiconductors

Product speciﬁcation

NPN 7 GHz wideband transistor

BFQ591

CHARACTERISTICS

Tj =25 °C; unless otherwise speciﬁed.

Notes

1. GUM is the maximum unilateral power gain, assuming s12 is zero and

2. dim = 60 dB (DIN45004B); Vp =Vo; Vq =Vo −6 dB; fp = 795.25 MHz; fq = 803.25 MHz; fr = 803.25 MHz;

measured at f(p+q+r) = 793.25 MHz.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V(BR)CBO

collector-base breakdown voltage IC = 0.1 mA; IE =0

−−

V(BR)CES

collector-emitter breakdown

voltage

IC = 0.1 mA; IB =0

−−

V(BR)EBO

emitter-base breakdown voltage

IE = 0.1 mA; IC =0

−−

ICBO

collector-base leakage current

IE = 0; VCB =10

−−

100

hFE

DC current gain

IC =70mA; VCE = 8 V

6090250

Cre

feedback capacitance

IC = 0; VCB = 12 V; f = 1 MHz

−

0.8

−

transition frequency

IC = 70 mA; VCE =12V;

f = 1 GHz

−

GHz

GUM

maximum unilateral power gain;

note 1

IC = 70 mA; VCE =12V;

Tamb =25 °C

f = 900 MHz

−

f = 2 GHz

−

5.5

−

|s21|2

insertion power gain

IC = 70 mA; VCE =12V;

f = 1 GHz; Tamb =25 °C

−

output voltage

note 2

−

700

−

10 log

–

() 1s

–

()

-------------------------------------------------------- dB

Rev. 04 - 2 October 2007

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