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BFQ591 Fiches technique(PDF) 5 Page - NXP Semiconductors |
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BFQ591 Fiches technique(HTML) 5 Page - NXP Semiconductors |
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5 / 11 page ![]() NXP Semiconductors Product specification NPN 7 GHz wideband transistor BFQ591 handbook, halfpage 0 Ts (°C) 3 2 1 0 50 100 200 150 MLD796 Ptot (W) Fig.2 Power derating curve. handbook, halfpage 0 250 50 100 150 200 MRA749 10−2 10−1 110 102 hFE IC (mA) Fig.3 DC current gain as a function of collector current; typical values. VCE =12V. handbook, halfpage 0 VCB (V) 1.2 0.8 0.4 0 48 16 12 MLD797 Cre (pF) Fig.4 Feedback capacitance as a function of collector-base voltage; typical values. IC = 0; f = 1 MHz. handbook, halfpage 8 4 2 0 6 MLD798 1 fT (GHz) IC (mA) 10 102 Fig.5 Transition frequency as a function of collector current. VCE = 12 V; f = 1 GHz. Rev. 04 - 2 October 2007 5 of 11 |
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