M24M01-R_12 datasheet(25/38 Pages) STMICROELECTRONICS

25 / 38 page

M24M01-R M24M01-DF

DC and AC parameters

Doc ID 12943 Rev 10

25/38

Table 10.

Cycling performance by groups of four bytes

Symbol

Parameter

Test condition(1)

Cycling performance for products identified by process letter K.

Max.

Unit

Ncycle

Write cycle

endurance(2)

The Write cycle endurance is defined for groups of four data bytes located at addresses [4*N, 4*N+1,

4*N+2, 4*N+3] where N is an integer. The Write cycle endurance is defined by characterization and

qualification.

≤ 25 °C, VCC(min) < VCC < VCC(max)

4,000,000

Write cycle(3)

A Write cycle is executed when either a Page Write, a Byte Write, a Write Identification Page or a Lock

Identification Page instruction is decoded. When using the Byte Write, the Page Write or the Write

Identification Page, refer also to Section 5.1.5: ECC (Error Correction Code) and Write cycling.

TA = 85 °C, VCC(min) < VCC < VCC(max)

1,200,000

Table 11.

Memory cell data retention

Parameter

Test condition

Min.

Unit

Data retention(1)

For products identified by process letter K. The data retention behavior is checked in production. The 200-

year limit is defined from characterization and qualification results.

TA = 55 °C

200

Year

M24M01-R Fiches technique(PDF) 25 Page - STMicroelectronics