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STM8L15 Fiches technique(PDF) 84 Page - STMicroelectronics

No de pièce STM8L15
Description  8-bit ultralow power MCU, up to 32 KB Flash, 1 KB Data EEPROM RTC, LCD, timers, USART, I2C, SPI, ADC, DAC, comparators
PDF  122 Pages
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM8L15 Fiches technique(HTML) 84 Page - STMicroelectronics

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Electrical parameters
STM8L151xx, STM8L152xx
84/122
Doc ID 15962 Rev 5
9.3.5
Memory characteristics
TA = -40 to 125 °C unless otherwise specified.
Table 34.
RAM and hardware registers
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VRM
Data retention mode (1)
1.
Minimum supply voltage without losing data stored in RAM (in Halt mode or under Reset) or in hardware
registers (only in Halt mode). Guaranteed by characterization, not tested in production.
Flash memory
Halt mode (or Reset)
1.4
V
Table 35.
Flash program and data EEPROM memory
Symbol
Parameter
Conditions
Min
Typ
Max
(1)
Unit
VDD
Operating voltage
(all modes, read/write/erase)
fSYSCLK = 16 MHz
1.65
3.6
V
tprog
Programming time for 1 or 128 bytes (block)
erase/write cycles (on programmed byte)
6ms
Programming time for 1 to 128 bytes (block)
write cycles (on erased byte)
3ms
Iprog
Programming/ erasing consumption
TA=+25 °C, VDD = 3.0 V
0.7
mA
TA=+25 °C, VDD = 1.8 V
tRET
Data retention (program memory) after 10000
erase/write cycles at TA=+85 °C
TRET=+55 °C
20(1)
years
Data retention (data memory) after 10000
erase/write cycles at TA=+85 °C
TRET=+55 °C
20(1)
Data retention (data memory) after 10000
erase/write cycles at TA=+85 °C
TRET=+85 °C
1(1)
NRW
Erase/write cycles (program memory)
See notes (1)(2)
10(1)
kcycles
Erase/write cycles (data memory)
See notes (1)(3)
300(1)
(4)
1.
Data based on characterization results, not tested in production.
2.
Retention guaranteed after cycling is 10 years @ 55 °C.
3.
Retention guaranteed after cycling is 1 year @ 55 °C.
4.
Data based on characterization performed on the whole data memory.



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