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DS20005426G-page 3

MCP960X/L0X/RL0X

1.0

ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings †

VDD............................................................................................................................................................................ 6.0V

Voltage at All Input/Output Pins ........................................................................................................ GND – 0.3V to 6.0V

Storage Temperature ..............................................................................................................................-65°C to +150°C

Ambient Temperature with Power Applied ..............................................................................................-40°C to +125°C

Junction Temperature (TJ)..................................................................................................................................... +150°C

ESD Protection on All Pins (HBM:MM) .......................................................................................................... (4 kV:300V)

Latch-up Current at Each Pin............................................................................................................................. ±100 mA

†Notice: Stresses above those listed under “Maximum ratings” may cause permanent damage to the device. This is

a stress rating only and functional operation of the device at those or any other conditions above those indicated in

the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods

may affect device reliability.

DC CHARACTERISTICS

Electrical Specifications: Unless otherwise indicated, VDD = 2.7V to 5.5V, GND = Ground, TA = -40°C to +125°C

(where: TA =TC, defined as Device Ambient Temperature).

Parameters

Sym.

Min.

Typ.

Max.

Unit

Conditions

Thermocouple Sensor Measurement Accuracy – MCP9600/01

TH Hot-Junction Accuracy (VDD =3.3V)

TH =TC +TΔ (Note 1)

TH_ACY

-1.5

±0.5

+1.5

°C

TA = 0°C to +85°C

-3.0

±1

+3.0

TA = -40°C to +125°C

TC Cold-Junction Accuracy (VDD =3.3V)

TC_ACY

-1.0

±0.5

+1.0

°C

TA = 0°C to +85°C

-2.0

±1

+2.0

TA = -40°C to +125°C

TΔ Junctions Temperature Delta Accuracy – MCP9600/01

Type K: TΔ = -200°C to +1372°C

VEMF Range: -5.907 mV to 54.886 mV

TΔ_ACY

-0.5

±0.25

+0.5

°C

TA = 0°C to +85°C,

VDD =3.3V (Note 2)

Type J: TΔ = -150°C to +1200°C

VEMF Range: -3.336 mV to 47.476 mV

Type T: TΔ = -200°C to +400°C

VEMF Range: -5.603 mV to 20.81 mV

Type N: TΔ = -150°C to +1300°C

VEMF Range: -3.336 mV to 47.476 mV

Type E: TΔ = -200°C to +1000°C

VEMF Range: -8.825 mV to 76.298 mV

Type S: TΔ = 250°C to +1664°C

VEMF Range: -1.875 mV to 17.529 mV

TA = 0°C to +85°C,

VDD =3.3V

(Notes 2, 3)

Type B: TΔ = 1000°C to +1800°C

VEMF Range: -4.834 mV to 13.591 mV

Type R: TΔ = 250°C to +1664°C

VEMF Range: -1.923 mV to 19.732 mV

Note 1:

The TC and T summation is implemented in milli-volt (mV) domain. The result, TH (mV), is converted to

Degree Celsius using the NIST ITS-90 Conversion database.

2:

The T_ACY temperature accuracy specification is defined as the device accuracy to the NIST ITS-90

Thermocouple EMF to Degree Celsius Conversion Database with TC = 0°C.

3:

The device measures temperature below the specified range, however, the sensitivity to changes in

temperature reduces exponentially. Type R and S measure down to -50°C, or -0.226 mVEMF and

-0.235 mVEMF, respectively. Type B measures down to 500°C or 1.242 mVEMF (see

Figures 2-7, 2-8, 2-10, 2-11, 2-14 and 2-17).

4:

Exceeding the VIN_CM input range may cause leakage current through the ESD protection diodes at the

thermocouple input pins. This parameter is characterized but not production tested.

5:

The Minimum and Maximum %VDD thresholds are characterized but not production tested.